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Found: 105      Displaying: 21 - 40
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
21.
IRG4BC20MDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 11A
IRF
-
3
-55°C
150°C
251K
22.
IRG4BC20SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A
IRF
-
3
-55°C
150°C
157K
23.
IRG4BC20SDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A
IRF
-
3
-55°C
150°C
287K
24.
IRG4BC20SDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A
IRF
-
3
-55°C
150°C
287K
25.
IRG4BC20SD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A
IRF
DDPak
3
-55°C
150°C
382K
26.
IRG4BC20UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 6.5A
IRF
-
3
-55°C
150°C
167K
27.
IRG4BC20UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 6.5A
IRF
-
3
-55°C
150°C
236K
28.
IRG4BC20WInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.16V @ VGE = 15V, IC = 6.5A
IRF
-
3
-55°C
150°C
130K
29.
IRG4BC20W-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.16V @ VGE = 15V, IC = 6.5A
IRF
DDPak
3
-55°C
150°C
152K
30.
IRG4BC30Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A
IRF
-
3
-55°C
150°C
167K
31.
IRG4BC30FDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A
IRF
-
3
-55°C
150°C
412K
32.
IRG4BC30KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
IRF
-
3
-55°C
150°C
137K
33.
IRG4BC30K-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
IRF
DDPak
3
-55°C
150°C
161K
34.
IRG4BC30K-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
IRF
DDPak
3
-55°C
150°C
161K
35.
IRG4BC30KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
IRF
-
3
-55°C
150°C
196K
36.
IRG4BC30KD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
IRF
DDPak
3
-55°C
150°C
225K
37.
IRG4BC30SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 18A
IRF
-
3
-55°C
150°C
161K
38.
IRG4BC30UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A
IRF
-
3
-55°C
150°C
167K
39.
IRG4BC30U-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A
IRF
DDPak
3
-55°C
150°C
308K
40.
IRG4BC30UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A
IRF
-
3
-55°C
150°C
234K
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