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Found: 201      Displaying: 101 - 120
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
101.
IRG4BC15UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A
IRF
-
3
-55°C
150°C
255K
102.
IRG4BC15UD-LInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A
IRF
TO-262
3
-55°C
150°C
210K
103.
IRG4BC20Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A
IRF
-
3
-55°C
150°C
161K
104.
IRG4BC20FDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A
IRF
-
3
-55°C
150°C
222K
105.
IRG4BC20FD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A
IRF
DDPak
3
-55°C
150°C
222K
106.
IRG4BC20KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A
IRF
-
3
-55°C
150°C
138K
107.
IRG4BC20K-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A
IRF
DDPak
3
-55°C
150°C
162K
108.
IRG4BC20KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A
IRF
-
3
-55°C
150°C
199K
109.
IRG4BC20KD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A
IRF
DDPak
3
-55°C
150°C
222K
110.
IRG4BC20MDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 11A
IRF
-
3
-55°C
150°C
251K
111.
IRG4BC20MD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 11A
IRF
DDPak
3
-55°C
150°C
200K
112.
IRG4BC20SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A
IRF
-
3
-55°C
150°C
157K
113.
IRG4BC20SDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A
IRF
-
3
-55°C
150°C
287K
114.
IRG4BC20SDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A
IRF
-
3
-55°C
150°C
287K
115.
IRG4BC20SD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A
IRF
DDPak
3
-55°C
150°C
382K
116.
IRG4BC20UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 6.5A
IRF
-
3
-55°C
150°C
167K
117.
IRG4BC20UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 6.5A
IRF
-
3
-55°C
150°C
236K
118.
IRG4BC20WInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.16V @ VGE = 15V, IC = 6.5A
IRF
-
3
-55°C
150°C
130K
119.
IRG4BC20W-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.16V @ VGE = 15V, IC = 6.5A
IRF
DDPak
3
-55°C
150°C
152K
120.
IRG4BC30Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A
IRF
-
3
-55°C
150°C
167K
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