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Why GetDatasheet.com ?
We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 190 Displaying: 81 - 100| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 81. | CL8282TI100-3 | Laser-configured ASIC | CLELO | TQFP | 100 | -40°C | 85°C | 115K | | 82. | DI100 | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 50V. Max average forward current (Ta=40degC) 1.0A. | PAJIT | DIP | 4 | -55°C | 125°C | 45K | | 83. | DI100 | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 50V. Max average forward current (Ta=40degC) 1.0A. | PAJIT | DIP | 4 | -55°C | 125°C | 45K | | 84. | DI101 | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward current (Ta=40degC) 1.0A. | PAJIT | DIP | 4 | -55°C | 125°C | 45K | | 85. | DI1010 | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 1000V. Max average forward current (Ta=40degC) 1.0A. | PAJIT | DIP | 4 | -55°C | 125°C | 45K | | 86. | DI102 | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward current (Ta=40degC) 1.0A. | PAJIT | DIP | 4 | -55°C | 125°C | 45K | | 87. | DI104 | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 400V. Max average forward current (Ta=40degC) 1.0A. | PAJIT | DIP | 4 | -55°C | 125°C | 45K | | 88. | DI106 | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 600V. Max average forward current (Ta=40degC) 1.0A. | PAJIT | DIP | 4 | -55°C | 125°C | 45K | | 89. | DI108 | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 800V. Max average forward current (Ta=40degC) 1.0A. | PAJIT | DIP | 4 | -55°C | 125°C | 45K | | 90. | IRFI1010N | HEXFET power MOSFET. VDSS =55V, RDS(on) = 0.012 Ohm, ID = 49 A | IRF | TO-220 FULLPAK | 3 | -55°C | 175°C | 109K | | 91. | ispLSI1016EA-100LJ44 | In-system programmable high density PLD, 100 MHz, 10ns, low power | LATIC | PLCC | 44 | 0°C | 70°C | 162K | | 92. | ispLSI1016EA-100LT44 | In-system programmable high density PLD, 100 MHz, 10ns, low power | LATIC | TQFP | 44 | 0°C | 70°C | 162K | | 93. | ispLSI1016EA-125LJ44 | In-system programmable high density PLD, 125 MHz, 7.5ns, low power | LATIC | PLCC | 44 | 0°C | 70°C | 162K | | 94. | ispLSI1016EA-200LJ44 | In-system programmable high density PLD, 200 MHz, 4.5ns, low power | LATIC | PLCC | 44 | 0°C | 70°C | 162K | | 95. | ispLSI1016EA-200LT44 | In-system programmable high density PLD, 200 MHz, 4.5ns, low power | LATIC | TQFP | 44 | 0°C | 70°C | 162K | | 96. | MDI100-12A3 | 1200V IGBT module | IXYS | - | 7 | - | - | 118K | | 97. | MII100-12A3 | 1200V IGBT module | IXYS | - | 7 | - | - | 118K | | 98. | MWI100-06A8 | 600V IGBT module | IXYS | - | 17 | -55°C | 150°C | 68K | | 99. | MWI100-12A8 | 1200V IGBT module | IXYS | - | 17 | -55°C | 150°C | 887K | | 100. | MWI100-12E8 | 1200V IGBT module | IXYS | - | 17 | -55°C | 150°C | 71K |
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