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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 81. | GS840FH18AT-10 | 10ns 256K x 18 4Mb sync burst SRAM | GSITE | TQFP | 100 | 0°C | 70°C | 634K |
| 82. | GS840FH18AT-10I | 10ns 256K x 18 4Mb sync burst SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 634K |
| 83. | GS840FH18AT-12 | 12ns 256K x 18 4Mb sync burst SRAM | GSITE | TQFP | 100 | 0°C | 70°C | 634K |
| 84. | GS840FH18AT-12I | 12ns 256K x 18 4Mb sync burst SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 634K |
| 85. | GS840FH18AT-8 | 8ns 256K x 18 4Mb sync burst SRAM | GSITE | TQFP | 100 | 0°C | 70°C | 634K |
| 86. | GS840FH18AT-8.5 | 8.5ns 256K x 18 4Mb sync burst SRAM | GSITE | TQFP | 100 | 0°C | 70°C | 634K |
| 87. | GS840FH18AT-8.5I | 8.5ns 256K x 18 4Mb sync burst SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 634K |
| 88. | GS840FH18AT-8.5I | 8.5ns 256K x 18 4Mb sync burst SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 634K |
| 89. | GS840FH18AT-8I | 8ns 256K x 18 4Mb sync burst SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 634K |
| 90. | GS840H18T-100 | 100MHz 12ns 256K x 18 4Mb sync burst SRAM | GSITE | TQFP | 100 | 0°C | 70°C | 626K |
| 91. | GS840H18T-100I | 100MHz 12ns 256K x 18 4Mb sync burst SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 626K |
| 92. | GS840H18T-150 | 150MHz 10ns 256K x 18 4Mb sync burst SRAM | GSITE | TQFP | 100 | 0°C | 70°C | 626K |
| 93. | GS840H18T-150I | 150MHz 10ns 256K x 18 4Mb sync burst SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 626K |
| 94. | GS840H18T-166 | 166MHz 8.5ns 256K x 18 4Mb sync burst SRAM | GSITE | TQFP | 100 | 0°C | 70°C | 626K |
| 95. | GS840H18T-166I | 166MHz 8.5ns 256K x 18 4Mb sync burst SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 626K |
| 96. | GS840H18T-180 | 180MHz 8ns 256K x 18 4Mb sync burst SRAM | GSITE | TQFP | 100 | 0°C | 70°C | 626K |
| 97. | IXFH180N20 | 200V HiPerFET power MOSFET single die MOSFET | IXYS | SOT-227B | 4 | -55°C | 150°C | 71K |
| 98. | PH1819-45A | 1805-1880 MHz,45 Watt, wireless power transistor | MACOM | - | - | - | - | 104K |
| 99. | PH1819-90 | 1805-1880 MHz,90 Watt, wireless power transistor | MACOM | - | - | - | - | 108K |
| 100. | STH18NB40FI | Power dissipation 80 W Transistor polarity N Channel Current Id cont. 12.4 A Current Idm pulse 73.6 A Voltage isolation 4 kV Pitch lead 5.45 mm Voltage Vds max 400 V Resistance Rds on 0.3 R | STM | TO-247 | - | - | - | 73K |
