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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 116 Displaying: 81 - 100| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 81. | BF820 | NPN high-voltage transistor. | PHLPS | SOT23 | 3 | -65°C | 150°C | 49K | | 82. | BF820W | NPN high-voltage transistor. | PHLPS | SOT323 | 3 | -65°C | 150°C | 61K | | 83. | BF822 | NPN high-voltage transistor. | PHLPS | SOT23 | 3 | -65°C | 150°C | 49K | | 84. | BF822W | NPN high-voltage transistor. | PHLPS | SOT323 | 3 | -65°C | 150°C | 61K | | 85. | BF822W | NPN high-voltage transistor. | PHLPS | SOT323 | 3 | -65°C | 150°C | 61K | | 86. | BF822W | NPN high-voltage transistor. | PHLPS | SOT323 | 3 | -65°C | 150°C | 61K | | 87. | IRF820 | HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A | IRF | - | 3 | -55°C | 150°C | 169K | | 88. | IRF820 | N-channel enhancement mode power MOS transistor, 500V, 3.0A | STM | TO-220 | 3 | -65°C | 150°C | 169K | | 89. | IRF820A | HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A | IRF | - | 3 | -55°C | 150°C | 100K | | 90. | IRF820AL | HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A | IRF | TO-262 | 3 | -55°C | 150°C | 133K | | 91. | IRF820AS | HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A | IRF | DDPak | 3 | -55°C | 150°C | 133K | | 92. | IRF820B | 500V N-Channel MOSFET | FAIR | - | - | - | - | 858K | | 93. | IRF820FI | N-channel enhancement mode power MOS transistor, 500V, 2.2A | STM | ISOWATT220 | 3 | -65°C | 150°C | 169K | | 94. | IRF820S | HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A | IRF | SMD-220 | 3 | -55°C | 150°C | 172K | | 95. | IRF822 | N-channel enhancement mode power MOS transistor, 500V, 2.8A | STM | TO-220 | 3 | -65°C | 150°C | 169K | | 96. | IRF822FI | N-channel enhancement mode power MOS transistor, 500V, 1.9A | STM | ISOWATT220 | 3 | -65°C | 150°C | 169K | | 97. | MPF820 | N-channel JFET, 25V | MOT | - | 3 | -65°C | 150°C | 113K | | 98. | MURF820 | 8.0A, 200V ultra fast recovery rectifier | MCC | ITO-220AC | - | - | - | 103K | | 99. | SF82R | Super fast rectifier. Case negative Maximum recurrent peak reverse voltage 100 V. Maximum average forward rectified current 8.0 A. | BYTES | TO-220A | 3 | -65°C | 150°C | 165K | | 100. | SRF820 | Schottky barrier rectifier. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 8.0 A. | CNEL | ITO-220AC | 2 | -65°C | 125°C | 150K |
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