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GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.

Found: 1156      Displaying: 781 - 800
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
781.
DSF20060SF555500V fast recovery diode
DYNEX
-
-
-
-
47K
782.
DSF20060SF565600V fast recovery diode
DYNEX
-
-
-
-
47K
783.
DSF20060SF585800V fast recovery diode
DYNEX
-
-
-
-
47K
784.
DSF20060SF606000V fast recovery diode
DYNEX
-
-
-
-
47K
785.
DSF2054SF404000V fast recovery diode
DYNEX
-
-
-40°C
125°C
68K
786.
DSF2054SF414100V fast recovery diode
DYNEX
-
-
-40°C
125°C
68K
787.
DSF2054SF424200V fast recovery diode
DYNEX
-
-
-40°C
125°C
68K
788.
DSF2054SF434300V fast recovery diode
DYNEX
-
-
-40°C
125°C
68K
789.
DSF2054SF444400V fast recovery diode
DYNEX
-
-
-40°C
125°C
68K
790.
DSF2054SF454500V fast recovery diode
DYNEX
-
-
-40°C
125°C
68K
791.
F201320 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
POFET
-
4
-65°C
150°C
38K
792.
F20217.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
POFET
-
2
-65°C
150°C
37K
793.
F204115 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
POFET
-
4
-65°C
150°C
36K
794.
F20462.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
POFET
-
6
-65°C
150°C
38K
795.
F20475 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
POFET
-
6
-65°C
150°C
36K
796.
F204810 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
POFET
-
6
-65°C
150°C
37K
797.
F20497.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
POFET
-
6
-65°C
150°C
35K
798.
IRFBF20LHEXFET power MOSFET. VDSS = 900V, RDS(on) = 8.0 Ohm, ID = 1.7A
IRF
TO-262
3
-55°C
150°C
311K
799.
IRFBF20SHEXFET power MOSFET. VDSS = 900V, RDS(on) = 8.0 Ohm, ID = 1.7A
IRF
DDPak
3
-55°C
150°C
311K
800.
IRFIBF20GHEXFET power MOSFET. VDSS = 900V, RDS(on) = 8.0 Ohm, ID = 1.2A
IRF
TO-220 FULLPAK
3
-55°C
150°C
168K
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