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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 761. | ACT-D1M96S-020F20C | High speed 3.3 Volt 96 Megabit synchronous DRAM multichip module. Speed 20ns. | ACT | CQFP | 200 | 0°C | 70°C | 105K |
| 762. | ACT-D1M96S-020F20M | High speed 3.3 Volt 96 Megabit synchronous DRAM multichip module. Speed 20ns. | ACT | CQFP | 200 | -55°C | 110°C | 105K |
| 763. | ACT-D1M96S-020F20T | High speed 3.3 Volt 96 Megabit synchronous DRAM multichip module. Speed 20ns. | ACT | CQFP | 200 | -55°C | 110°C | 105K |
| 764. | C8051F206 | Mixed-signal 8KB ISP flash MCU | CYGNL | - | 48 | -40°C | 85°C | 48K |
| 765. | F2001 | 2.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 2 | -65°C | 150°C | 37K |
| 766. | F2002 | 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 2 | -65°C | 150°C | 37K |
| 767. | F2003 | 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 37K |
| 768. | F2004 | 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 37K |
| 769. | F2012 | 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 2 | -65°C | 150°C | 37K |
| 770. | MX29F200BMI-12 | Access time: 120ns; 2M-bit (256K x 8/128K x 16) CMOS flash memory | MCNIX | SOP | 44 | -40°C | 85°C | 720K |
| 771. | MX29F200BMI-70 | Access time: 70ns; 2M-bit (256K x 8/128K x 16) CMOS flash memory | MCNIX | SOP | 44 | -40°C | 85°C | 720K |
| 772. | MX29F200BMI-90 | Access time: 90ns; 2M-bit (256K x 8/128K x 16) CMOS flash memory | MCNIX | SOP | 44 | -40°C | 85°C | 720K |
| 773. | MX29F200BTA-12 | Access time: 120ns; 2M-bit (256K x 8/128K x 16) CMOS flash memory | MCNIX | TSOP | 48 | -40°C | 85°C | 720K |
| 774. | MX29F200BTA-90 | Access time: 90ns; 2M-bit (256K x 8/128K x 16) CMOS flash memory | MCNIX | TSOP | 48 | -40°C | 85°C | 720K |
| 775. | MX29F200BTI-12 | Access time: 120ns; 2M-bit (256K x 8/128K x 16) CMOS flash memory | MCNIX | TSOP | 48 | -40°C | 85°C | 720K |
| 776. | MX29F200BTI-70 | Access time: 70ns; 2M-bit (256K x 8/128K x 16) CMOS flash memory | MCNIX | TSOP | 48 | -40°C | 85°C | 720K |
| 777. | MX29F200BTI-90 | Access time: 90ns; 2M-bit (256K x 8/128K x 16) CMOS flash memory | MCNIX | TSOP | 48 | -40°C | 85°C | 720K |
| 778. | MX29F200TTI-12 | Access time: 120ns; 2M-bit (256K x 8/128K x 16) CMOS flash memory | MCNIX | TSOP | 48 | -40°C | 85°C | 720K |
| 779. | MX29F200TTI-70 | Access time: 70ns; 2M-bit (256K x 8/128K x 16) CMOS flash memory | MCNIX | TSOP | 48 | -40°C | 85°C | 720K |
| 780. | MX29F200TTI-90 | Access time: 90ns; 2M-bit (256K x 8/128K x 16) CMOS flash memory | MCNIX | TSOP | 48 | -40°C | 85°C | 720K |
