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Found: 153      Displaying: 81 - 100
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
81.
IF1320N-Channel silicon junction field-effect transistor
IFET
TO-236AB
3
-
-
63K
82.
IF1330N-Channel silicon junction field-effect transistor
IFET
TO-236AB
3
-
-
59K
83.
IF1331N-Channel silicon junction field-effect transistor
IFET
TO-72
4
-
-
62K
84.
IRF130Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =100V, RDS(on) = 0.18 Ohm, ID = 14A
IRF
TO-3
3
-55°C
150°C
147K
85.
IRF130100V Vdss N-Channel FET (field effect transistor)
SAMEL
TO3
-
-
-
22K
86.
IRF130SMD100V Vdss N-Channel FET (field effect transistor)
SAMEL
SMD1
-
-
-
22K
87.
IRF1310NHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.036 Ohm, ID = 42A.
IRF
-
3
-55°C
175°C
96K
88.
IRF1310NSHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.036 Ohm, ID = 42A.
IRF
DDPak
3
-55°C
175°C
156K
89.
MB91F133PBT32-bit RISC microcontroller
FJTSU
plastic FBGA
144
0°C
70°C
1M
90.
MB91F133PMT232-bit RISC microcontroller
FJTSU
plastic LQFP
144
0°C
70°C
1M
91.
MGF1302Low noise GaAs fet
MITS
GD-4
3
-
-
211K
92.
MGF1303BLow noise GaAs fet
MITS
GD-4
3
-
-
175K
93.
MRF1345 W, N-channel MOS broadband RF power FET
MACOM
-
4
-
-
208K
94.
MRF134RF power field-effect transistor
MOT
-
4
-
-
205K
95.
MRF13615 W, N-channel MOS broadband RF power FET
MACOM
-
4
-
-
340K
96.
MRF136RF power field-effect transistor
MOT
-
4
-
-
284K
97.
MRF136RF power field-effect transistor
MOT
-
4
-
-
284K
98.
MRF136Y30 W, N-channel MOS broadband RF power FET
MACOM
-
4
-
-
221K
99.
MRF13730 W, N-channel MOS broadband RF power FET
MACOM
-
4
-
-
213K
100.
SF13-TBReverse voltage: 150.00V; 1.0A super-fast rectifier
WTE
-
2
-65°C
125°C
46K
101.
SF13-TBReverse voltage: 150.00V; 1.0A super-fast rectifier
WTE
-
2
-65°C
125°C
46K
1 2 3 4 5 6 7 8


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