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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 421. | ACT-F128K32N-060P3Q | High speed 4 Megabit FLASH multichip module. Speed 60ns. | ACT | PGA | 66 | -55°C | 125°C | 201K |
| 422. | ACT-F128K32N-070P3Q | High speed 4 Megabit FLASH multichip module. Speed 70ns. | ACT | PGA | 66 | -55°C | 125°C | 201K |
| 423. | ACT-F128K32N-090P3Q | High speed 4 Megabit FLASH multichip module. Speed 90ns. | ACT | PGA | 66 | -55°C | 125°C | 201K |
| 424. | ACT-SF128K32N-26P1Q | High speed 128K x 32 SRAM / 128K x 32 FLASH multichip module. Speed 25(SRAM) / 60(FLASH) ns. MIL-PRF-38534 compliant/SMD. | ACT | PGA-Type | 66 | - | - | 168K |
| 425. | F1206 | 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 2 | -65°C | 150°C | 36K |
| 426. | F1207 | 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 37K |
| 427. | F1208 | 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 38K |
| 428. | F1209 | 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 8 | -65°C | 150°C | 36K |
| 429. | F1210 | 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 37K |
| 430. | F1214 | 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 6 | -65°C | 150°C | 35K |
| 431. | F1220 | 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 38K |
| 432. | F1221 | 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 2 | -65°C | 150°C | 37K |
| 433. | F1222 | 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 2 | -65°C | 150°C | 38K |
| 434. | F1240 | 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 6 | -65°C | 150°C | 41K |
| 435. | F1260 | 60 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 6 | -65°C | 150°C | 38K |
| 436. | F1280 | 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 6 | -65°C | 150°C | 39K |
| 437. | OM150F120CMA | Module | OMNI | - | 6 | - | - | 48K |
| 438. | OM35F120HB | 1200V high current, high voltage IGBT with FRED diodes | OMNI | Hermetic | 6 | -55°C | 150°C | 39K |
| 439. | OM35F120PB | 1200V high current IGBT with FRED diodes | OMNI | Hermetic | 6 | -55°C | 150°C | 39K |
| 440. | OM35F120SB | 1200V high current IGBT with FRED diodes | OMNI | Hermetic | 3 | -55°C | 150°C | 18K |
