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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 81. | CAT28F102NA-45T | 45ns 1M-bit CMOS flash memory | CTLST | PLCC | 44 | -40°C | 105°C | 159K |
| 82. | CAT28F102NA-55T | 55ns 1M-bit CMOS flash memory | CTLST | PLCC | 44 | -40°C | 105°C | 159K |
| 83. | CAT28F102NA-70T | 70ns 1M-bit CMOS flash memory | CTLST | PLCC | 44 | -40°C | 105°C | 159K |
| 84. | DF102 | 100 V, 1 A, bridge rectifier | LRC | DIP | 4 | - | - | 57K |
| 85. | DF102 | 100 V, 1 A, bridge rectifier | LRC | DIP | 4 | - | - | 57K |
| 86. | DF102-S | 100 V, 1 A, bridge rectifier | LRC | SMD | 4 | - | - | 57K |
| 87. | DF102-S | 100 V, 1 A, bridge rectifier | LRC | SMD | 4 | - | - | 57K |
| 88. | F1020 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 40K |
| 89. | F1021 | 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 38K |
| 90. | F1022 | 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 38K |
| 91. | F1027 | 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 40K |
| 92. | SF102 | Super fast rectifier. Max recurrent peak reverse voltage Vrrm = 100 V. Max average forward rectified current I(av) = 1.0 A | CNEL | - | 2 | -65°C | 125°C | 151K |
| 93. | SF102 | 100 V, 1 A, Super fast recovery rectifier | GODAR | DO | 2 | -55°C | 150°C | 174K |
| 94. | SMF102 | Surface mount fast recovery rectifier. Maximum recurrent peak reverse voltage 100 V. Maximum average forward rectified current 1.0 A. | BYTES | SM-1 | - | -65°C | 175°C | 151K |
| 95. | SMF102A | Surface mount fast recovery rectifier. Maximum recurrent peak reverse voltage 100 V. Maximum average forward rectified current 1.0 A. | BYTES | DO-214AC | - | -65°C | 175°C | 156K |
| 96. | SRF1020 | Schottky barrier rectifier (single chip). Max repetitive peak reverse voltage 20 V. Max average forward rectified current 10.0 A. | CNEL | ITO-220AC | 2 | -65°C | 150°C | 183K |
| 97. | SRF1020 | Schottky barrier rectifier. Common cathode. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 10.0 A. | CNEL | ITO-220AB | 3 | -65°C | 125°C | 170K |
| 98. | SRF1020A | Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 10.0 A. | CNEL | ITO-220AB | 3 | -65°C | 125°C | 170K |
| 99. | UF102 | Ultrafast switching rectifier. Peak reverse voltage 200 V. Average forward current 1.0 A. | PAJIT | - | 2 | -55°C | 150°C | 54K |
| 100. | UF102G | Ultrafast switching rectifier. Peak reverse voltage 200 V. Average forward current 1.0 A. | PAJIT | - | 2 | -55°C | 150°C | 56K |
| 101. | UF102S | Ultrafast switching rectifier. Peak reverse voltage 200 V. Average forward current 1.0 A. | PAJIT | A-405 | 2 | -55°C | 150°C | 55K |
