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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 41. | F1012 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 38K |
| 42. | F1014 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 2 | -65°C | 150°C | 38K |
| 43. | F1015 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 38K |
| 44. | F1016 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 41K |
| 45. | F1018 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 8 | -65°C | 150°C | 38K |
| 46. | F1019 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 38K |
| 47. | IRF1010E | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A. | IRF | - | 3 | -55°C | 175°C | 195K |
| 48. | IRF1010EL | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A. | IRF | TO-262 | 3 | -55°C | 175°C | 123K |
| 49. | IRF1010ES | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A. | IRF | DDPak | 3 | -55°C | 175°C | 123K |
| 50. | IRF1010N | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. | IRF | - | 3 | -55°C | 175°C | 211K |
| 51. | IRF1010NL | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. | IRF | TO-262 | 3 | -55°C | 175°C | 146K |
| 52. | IRF1010NS | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. | IRF | DDPak | 3 | -55°C | 175°C | 146K |
| 53. | MF1018S-1 | SAW filter for digital mobile telephone | MITS | SMD | 6 | -20°C | 75°C | 146K |
| 54. | MF1018S-2 | SAW filter for digital mobile telephone | MITS | SMD | 6 | -20°C | 75°C | 144K |
| 55. | MF1018S-3 | SAW filter for digital mobile telephone | MITS | SMD | 6 | -20°C | 75°C | 161K |
| 56. | MF1018S-4 | SAW filter for digital mobile telephone | MITS | SMD | 6 | -20°C | 75°C | 137K |
| 57. | MF1018V-4 | Filter for the transmitting RF circuit | MITS | SMD | - | -20°C | 70°C | 74K |
| 58. | MRF10120 | 120 W, microwave power transistor NPN silicon | MACOM | - | 3 | - | - | 128K |
| 59. | MRF10150 | 150 W, microwave power transistor NPN silicon | MACOM | - | 3 | - | - | 139K |
| 60. | SF101 | 50 V, 1 A, Super fast recovery rectifier | GODAR | DO | 2 | -55°C | 150°C | 174K |
