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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 621. | F1065 | 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 36K |
| 622. | F1066 | 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 8 | -65°C | 150°C | 39K |
| 623. | F1069 | 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 2 | -65°C | 150°C | 36K |
| 624. | F1070 | 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 38K |
| 625. | F1072 | 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 38K |
| 626. | F1074 | 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 40K |
| 627. | F1076 | 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 38K |
| 628. | F1077 | 125 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 38K |
| 629. | F1081 | 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 40K |
| 630. | IRF1010E | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A. | IRF | - | 3 | -55°C | 175°C | 195K |
| 631. | IRF1010ES | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A. | IRF | DDPak | 3 | -55°C | 175°C | 123K |
| 632. | MRF10005 | 5 W, microwave power transistor NPN silicon | MACOM | - | 3 | - | - | 160K |
| 633. | MRF1000MB | 0.7 W, microwave power transistor NPN silicon | MACOM | - | 4 | - | - | 104K |
| 634. | MRF10031MB | 30 W, microwave power transistor NPN silicon | MACOM | - | 3 | - | - | 163K |
| 635. | MRF1004MB | 4 W, microwave power transistor NPN silicon | MACOM | - | 4 | - | - | 101K |
| 636. | MRF10120 | 120 W, microwave power transistor NPN silicon | MACOM | - | 3 | - | - | 128K |
| 637. | MRF10150 | 150 W, microwave power transistor NPN silicon | MACOM | - | 3 | - | - | 139K |
| 638. | MRF10502 | 500 W, microwave power transistor NPN silicon | MACOM | - | 3 | - | - | 142K |
| 639. | MRF1090MA | 90 W, microwave power transistor NPN silicon | MACOM | - | 4 | - | - | 127K |
| 640. | MRF1090MB | 90 W, microwave power transistor NPN silicon | MACOM | - | 4 | - | - | 120K |
