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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 601. | F1004 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 6 | -65°C | 150°C | 37K |
| 602. | F1005 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 37K |
| 603. | F1006 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 37K |
| 604. | F1007 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 38K |
| 605. | F1008 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 38K |
| 606. | F1012 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 38K |
| 607. | F1014 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 2 | -65°C | 150°C | 38K |
| 608. | F1015 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 38K |
| 609. | F1016 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 41K |
| 610. | F1018 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 8 | -65°C | 150°C | 38K |
| 611. | F1019 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 38K |
| 612. | F1020 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 40K |
| 613. | F1021 | 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 38K |
| 614. | F1022 | 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 38K |
| 615. | F1027 | 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 40K |
| 616. | F1034 | 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 31K |
| 617. | F1040 | 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 8 | -65°C | 150°C | 32K |
| 618. | F1058 | 30 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 38K |
| 619. | F1060 | 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 2 | -65°C | 150°C | 38K |
| 620. | F1063 | 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 6 | -65°C | 150°C | 32K |
