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Found: 109      Displaying: 61 - 80
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
61.
NTE5940Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 50V. Average forward current 15A.
NTE
DO4
2
-65°C
175°C
24K
62.
NTE5942Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 15A.
NTE
DO4
2
-65°C
175°C
24K
63.
NTE5944Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 15A.
NTE
DO4
2
-65°C
175°C
24K
64.
NTE5945Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 15A.
NTE
DO4
2
-65°C
175°C
24K
65.
NTE5945Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 15A.
NTE
DO4
2
-65°C
175°C
24K
66.
NTE5946Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 15A.
NTE
DO4
2
-65°C
175°C
24K
67.
NTE5947Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 15A.
NTE
DO4
2
-65°C
175°C
24K
68.
NTE5948Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 15A.
NTE
DO4
2
-65°C
175°C
24K
69.
NTE5949Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 15A.
NTE
DO4
2
-65°C
175°C
24K
70.
NTE5950Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 15A.
NTE
DO4
2
-65°C
175°C
24K
71.
NTE5951Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 15A.
NTE
DO4
2
-65°C
175°C
24K
72.
NTE5962Silicon power rectifier diode. Cathode to case. Repetitive peak reverse voltage 400V. Average rectified forward current 25A.
NTE
-
2
-65°C
175°C
19K
73.
NTE5963Silicon power rectifier diode. Anode to case. Repetitive peak reverse voltage 400V. Average rectified forward current 25A.
NTE
-
2
-65°C
175°C
19K
74.
NTE5966Silicon power rectifier diode. Cathode to case. Repetitive peak reverse voltage 800V. Average rectified forward current 25A.
NTE
-
2
-65°C
175°C
19K
75.
NTE5967Silicon power rectifier diode. Anode to case. Repetitive peak reverse voltage 800V. Average rectified forward current 25A.
NTE
-
2
-65°C
175°C
19K
76.
NTE5981Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 40A.
NTE
-
2
-65°C
175°C
26K
77.
NTE5983Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 40A.
NTE
-
2
-65°C
175°C
26K
78.
NTE5989Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 40A.
NTE
-
2
-65°C
175°C
26K
79.
NTE5991Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A.
NTE
-
2
-65°C
175°C
26K
80.
NTE5993Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 40A.
NTE
-
2
-65°C
175°C
26K
81.
NTE5999Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 40A.
NTE
-
2
-65°C
175°C
26K
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