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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
21. | NSPE590S | 120mW; 5V; 30mA nichia blue LED | NICHA | - | 2 | -30°C | 85°C | 402K |
22. | NTE5900 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
23. | NTE5901 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
24. | NTE5901 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
25. | NTE5902 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
26. | NTE5903 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
27. | NTE5904 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
28. | NTE5905 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
29. | NTE5908 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
30. | NTE5909 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
31. | NTE5911 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
32. | NTE5911 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
33. | NTE593 | Silicon diode, high speed switch. Repetitive peak reverse voltage 85V. Average rectified forward current 250mA. | NTE | SOT-23 | 3 | 0°C | 150°C | 18K |
34. | NTE593 | Silicon diode, high speed switch. Repetitive peak reverse voltage 85V. Average rectified forward current 250mA. | NTE | SOT-23 | 3 | 0°C | 150°C | 18K |
35. | NTE594 | Silicon diode, bandswitch. Continuous reverse voltage 35V. DC forward current 100mA. | NTE | SOT-23 | 3 | 0°C | 125°C | 16K |
36. | NTE595 | Silicon diode, dual, common cathode, high speed . Continuous reverse voltage 70V. DC forward current 250mA. | NTE | SOT-23 | 3 | 0°C | 175°C | 19K |
37. | NTE596 | Silicon diode, dual, common anode, high speed . Continuous reverse voltage 70V. DC forward current 250mA. | NTE | SOT-23 | 3 | 0°C | 175°C | 19K |
38. | NTE597 | Silicon rectifier, ultra fast. Peak repetitive reverse voltage 200V. Average rectified forward current 8A. | NTE | TO220 | 2 | -65°C | 175°C | 18K |
39. | NTE598 | Silicon rectifier, ultra fast. Peak repetitive reverse voltage 600V. Average rectified forward current 8A. | NTE | TO220 | 2 | -65°C | 175°C | 18K |
40. | NTE599 | Silicon rectifier, ultra fast. Peak repetitive reverse voltage 200V. Average rectified forward current 15A. | NTE | TO220 | 2 | -65°C | 175°C | 18K |