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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 281. | NTE558 | General purpose silicon rectifier. Peak repetitive reverse voltage 1500V. Average rectified forward current 1A. | NTE | DO41 | 2 | -65°C | 175°C | 17K |
| 282. | NTE5582 | Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 600V. Max RMS on-state current It(rms) = 235A. | NTE | - | 4 | -40°C | 125°C | 23K |
| 283. | NTE5584 | Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 1200V. Max RMS on-state current It(rms) = 235A. | NTE | - | 4 | -40°C | 125°C | 23K |
| 284. | NTE5585 | Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 1600V. Max RMS on-state current It(rms) = 235A. | NTE | - | 4 | -40°C | 125°C | 23K |
| 285. | NTE5586 | Silicon controlled rectiifier for phase control applications. Repetitive peak voltage Vdrm,Vrrm = 600V. RMS on-state current It(rms) = 355A. | NTE | - | 4 | -40°C | 125°C | 23K |
| 286. | NTE5587 | Silicon controlled rectiifier for phase control applications. Repetitive peak voltage Vdrm,Vrrm = 600V. RMS on-state current It(rms) = 550A. | NTE | - | 4 | -40°C | 125°C | 24K |
| 287. | NTE5587 | Silicon controlled rectiifier for phase control applications. Repetitive peak voltage Vdrm,Vrrm = 600V. RMS on-state current It(rms) = 550A. | NTE | - | 4 | -40°C | 125°C | 24K |
| 288. | NTE5589 | Silicon controlled rectiifier for phase control applications. Repetitive peak voltage Vdrm,Vrrm = 1200V. RMS on-state current It(rms) = 550A. | NTE | - | 4 | -40°C | 125°C | 24K |
| 289. | NTE5590 | Silicon controlled rectiifier (SCR), 470 Amp. Repetitive peak voltage Vdrm,Vrrm,Vdsm = 200V. RMS on-state current It(rms) = 780A. | NTE | - | 3 | -40°C | 125°C | 21K |
| 290. | NTE5591 | Silicon controlled rectiifier (SCR), 470 Amp. Repetitive peak voltage Vdrm,Vrrm,Vdsm = 600V. RMS on-state current It(rms) = 780A. | NTE | - | 3 | -40°C | 125°C | 21K |
| 291. | NTE5592 | Silicon controlled rectiifier (SCR), 470 Amp. Repetitive peak voltage Vdrm,Vrrm,Vdsm = 1200V. RMS on-state current It(rms) = 780A. | NTE | - | 3 | -40°C | 125°C | 21K |
| 292. | NTE5593 | Silicon controlled rectiifier for phase control applications. Repetitive peak voltage Vdrm,Vrrm = 1600V. RMS on-state current It(rms) = 550A. | NTE | - | 4 | -40°C | 125°C | 24K |
| 293. | NTE5597 | Silicon controlled rectiifier (SCR), 470 Amp. Repetitive peak voltage Vdrm,Vrrm,Vdsm = 1600V. RMS on-state current It(rms) = 780A. | NTE | - | 3 | -40°C | 125°C | 21K |
| 294. | P80CE558EBB | 3.5-16 MHz, single-chip 8-bit microcontroller | PHLPS | QFP | 80 | 0°C | 70°C | 390K |
| 295. | P80CE558EFB | 3.5-16 MHz, single-chip 8-bit microcontroller | PHLPS | QFP | 80 | -40°C | 85°C | 390K |
| 296. | P83CE558EBB | 3.5-16 MHz, single-chip 8-bit microcontroller | PHLPS | QFP | 80 | 0°C | 70°C | 390K |
| 297. | P83CE558EBB | 3.5-16 MHz, single-chip 8-bit microcontroller | PHLPS | QFP | 80 | 0°C | 70°C | 390K |
| 298. | P83CE558EFB | 3.5-16 MHz, single-chip 8-bit microcontroller | PHLPS | QFP | 80 | -40°C | 85°C | 390K |
| 299. | P89CE558EBB | 3.5-16 MHz, single-chip 8-bit microcontroller | PHLPS | QFP | 80 | 0°C | 70°C | 390K |
| 300. | P89CE558EFB | 3.5-16 MHz, single-chip 8-bit microcontroller | PHLPS | QFP | 80 | -40°C | 85°C | 390K |
