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Found: 336      Displaying: 241 - 260
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
241.
NTE552Silicon rectifier. Max reccurent reverse voltage 600V. Max average forward rectified current 1A.
NTE
DO41
2
-65°C
175°C
17K
242.
NTE5524Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 200V. RMS forard current It(rms) = 35A.
NTE
TO48
3
-65°C
125°C
18K
243.
NTE5525Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 250V. RMS forard current It(rms) = 25A.
NTE
TO48
3
-65°C
125°C
18K
244.
NTE5526Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 300V. RMS forard current It(rms) = 25A.
NTE
TO48
3
-65°C
125°C
18K
245.
NTE5527Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 400V. RMS forard current It(rms) = 25A.
NTE
TO48
3
-65°C
125°C
18K
246.
NTE5528Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 500V. RMS forard current It(rms) = 25A.
NTE
TO48
3
-65°C
125°C
18K
247.
NTE5529Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 600V. RMS forard current It(rms) = 25A.
NTE
TO48
3
-65°C
125°C
18K
248.
NTE553Schottky barrier diode. Reverse voltage -35V. Forward current 100mA.
NTE
DO35
2
-20°C
60°C
17K
249.
NTE5530Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 700V. RMS forard current It(rms) = 25A.
NTE
TO48
3
-65°C
125°C
18K
250.
NTE5531Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 800V. RMS forard current It(rms) = 25A.
NTE
TO48
3
-65°C
125°C
18K
251.
NTE5538Silicon controlled rectifier (SCR). Peak forward blocking voltage 800V. RMS on-state current 50A.
NTE
TO218
3
-40°C
125°C
23K
252.
NTE5539Silicon controlled rectifier (SCR). Repetitive peak off-state forward & reverse voltage Vdrm,Vrrm =400V. Max RMS on-state current 55A.
NTE
TO218
3
-40°C
125°C
19K
253.
NTE5540Silicon controlled rectifier (SCR). Repetitive peak off-state forward & reverse voltage Vdrm,Vrrm =800V. Max RMS on-state current 55A.
NTE
TO218
3
-40°C
125°C
19K
254.
NTE5541Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm =50V. RMS on-state current 35A.
NTE
TO48
3
-40°C
150°C
19K
255.
NTE5542Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 100V. RMS on-state current 35A.
NTE
TO48
3
-40°C
150°C
19K
256.
NTE5543Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 200V. RMS on-state current 35A.
NTE
TO48
3
-40°C
150°C
19K
257.
NTE5544Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 300V. RMS on-state current 35A.
NTE
TO48
3
-40°C
150°C
19K
258.
NTE5545Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 400V. RMS on-state current 35A.
NTE
TO48
3
-40°C
150°C
19K
259.
NTE5546Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 500V. RMS on-state current 35A.
NTE
TO48
3
-40°C
150°C
19K
260.
NTE5547Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 600V. RMS on-state current 35A.
NTE
TO48
3
-40°C
150°C
19K
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