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Found: 336      Displaying: 221 - 240
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
221.
NTE5504Silicon controlled rectifier (SCR), 16 Amp. Peak forward blocking voltage, peak reverse blocking voltage Vdrm,Vrsm(rep) = 200V. Forward current RMS It = 25A.
NTE
TO48
3
-65°C
125°C
21K
222.
NTE5505Silicon controlled rectifier (SCR), 16 Amp. Peak forward blocking voltage, peak reverse blocking voltage Vdrm,Vrsm(rep) = 250V. Forward current RMS It = 25A.
NTE
TO48
3
-65°C
125°C
21K
223.
NTE5506Silicon controlled rectifier (SCR), 16 Amp. Peak forward blocking voltage, peak reverse blocking voltage Vdrm,Vrsm(rep) = 300V. Forward current RMS It = 25A.
NTE
TO48
3
-65°C
125°C
21K
224.
NTE5507Silicon controlled rectifier (SCR), 16 Amp. Peak forward blocking voltage, peak reverse blocking voltage Vdrm,Vrsm(rep) = 400V. Forward current RMS It = 25A.
NTE
TO48
3
-65°C
125°C
21K
225.
NTE5509Silicon controlled rectifier (SCR), 16 Amp. Peak forward blocking voltage, peak reverse blocking voltage Vdrm,Vrsm(rep) = 600V. Forward current RMS It = 25A.
NTE
TO48
3
-65°C
125°C
21K
226.
NTE5509Silicon controlled rectifier (SCR), 16 Amp. Peak forward blocking voltage, peak reverse blocking voltage Vdrm,Vrsm(rep) = 600V. Forward current RMS It = 25A.
NTE
TO48
3
-65°C
125°C
21K
227.
NTE5511Silicon controlled rectifier (SCR), 5 Amp. Peak reverse voltage (repetitive) Vrm(rep) = 200V. Forward current RMS Ifrms = 5A.
NTE
TO66
2
-40°C
100°C
22K
228.
NTE5512Silicon controlled rectifier (SCR), 5 Amp. Peak reverse voltage (repetitive) Vrm(rep) = 400V. Forward current RMS Ifrms = 5A.
NTE
TO66
2
-40°C
100°C
22K
229.
NTE5513Silicon controlled rectifier (SCR), 5 Amp. Peak reverse voltage (repetitive) Vrm(rep) = 600V. Forward current RMS Ifrms = 5A.
NTE
TO66
2
-40°C
100°C
22K
230.
NTE5514Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 200V. RMS on-state current It(rms) = 20A.
NTE
-
3
-40°C
150°C
18K
231.
NTE5515Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 400V. RMS on-state current It(rms) = 20A.
NTE
-
3
-40°C
150°C
18K
232.
NTE5516Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 600V. RMS on-state current It(rms) = 20A.
NTE
-
3
-40°C
150°C
18K
233.
NTE5517Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 200V. RMS on-state current It(rms) = 35A.
NTE
-
3
-40°C
150°C
18K
234.
NTE5518Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 400V. RMS on-state current It(rms) = 35A.
NTE
-
3
-40°C
150°C
18K
235.
NTE5519Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 600V. RMS on-state current It(rms) = 35A.
NTE
-
3
-40°C
150°C
18K
236.
NTE5519Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 600V. RMS on-state current It(rms) = 35A.
NTE
-
3
-40°C
150°C
18K
237.
NTE5520Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 25V. RMS forard current It(rms) = 25A.
NTE
TO48
3
-65°C
125°C
18K
238.
NTE5521Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 50V. RMS forard current It(rms) = 25A.
NTE
TO48
3
-65°C
125°C
18K
239.
NTE5522Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 100V. RMS forard current It(rms) = 25A.
NTE
TO48
3
-65°C
125°C
18K
240.
NTE5523Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 150V. RMS forard current It(rms) = 25A.
NTE
TO48
3
-65°C
125°C
18K
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