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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 161. | 1.5KE47A | 40.20V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications | MDE | - | - | -55°C | 175°C | 582K |
| 162. | 1.5KE47A | 40.20V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor | MDE | DO-201 | 2 | -55°C | 175°C | 658K |
| 163. | 1.5KE47A | 47 V, 1 mA, glass passivated junction transient voltage suppressor | SURGE | DO-201AE | 2 | -65°C | 175°C | 227K |
| 164. | 1.5KE47C | 47 V, 1 mA, glass passivated junction transient voltage suppressor | SURGE | DO-201AE | 2 | -65°C | 175°C | 227K |
| 165. | 1.5KE47CA | 47 V, 1 mA, glass passivated junction transient voltage suppressor | SURGE | DO-201AE | 2 | -65°C | 175°C | 227K |
| 166. | NTE470 | Silicon NPN transistor. RF power output. | NTE | W52 | 4 | - | - | 24K |
| 167. | NTE470 | Silicon NPN transistor. RF power output. | NTE | W52 | 4 | - | - | 24K |
| 168. | NTE471 | Silicon NPN transistor. RF power output, Po = 100W @ 30MHz. | NTE | - | 4 | 0°C | 200°C | 23K |
| 169. | NTE472 | Silicon NPN transistor. RF power output, Po = 1.8W @ 175MHz. | NTE | - | 3 | - | - | 21K |
| 170. | NTE473 | Silicon NPN transistor. RF power driver. | NTE | TO39 | 3 | -65°C | 200°C | 23K |
| 171. | NTE475 | Silicon NPN transistor. RF power output. | NTE | - | 3 | -65°C | 200°C | 21K |
| 172. | NTE475 | Silicon NPN transistor. RF power output. | NTE | - | 3 | -65°C | 200°C | 21K |
| 173. | NTE476 | Silicon NPN transistor. RF power output. | NTE | - | 3 | -65°C | 200°C | 22K |
| 174. | NTE477 | Silicon NPN transistor. RF power output. | NTE | - | 4 | 0°C | 175°C | 22K |
| 175. | NTE478 | Silicon NPN transistor. RF power output, Po = 100W @ 175 MHz. | NTE | - | 4 | 0°C | 200°C | 22K |
| 176. | P4KE47A | 40.20V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | - | 2 | -55°C | 175°C | 844K |
| 177. | P6KE47A | 40.20V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | DO-15 | 2 | -55°C | 175°C | 468K |
| 178. | P6KE47A | 47 V, 1 mA, 600 W, glass passivated junction transient voltage suppressor | SURGE | DO-15 | 2 | -65°C | 175°C | 201K |
| 179. | P6KE47C | 47 V, 1 mA, 600 W, glass passivated junction transient voltage suppressor | SURGE | DO-15 | 2 | -65°C | 175°C | 201K |
| 180. | P6KE47CA | 47 V, 1 mA, 600 W, glass passivated junction transient voltage suppressor | SURGE | DO-15 | 2 | -65°C | 175°C | 201K |
