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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 301. | 1.5KE24A | 20.40V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications | MDE | - | - | -55°C | 175°C | 582K |
| 302. | 1.5KE24A | 20.50V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor | MDE | DO-201 | 2 | -55°C | 175°C | 658K |
| 303. | 1.5KE24A | 24 V, 1 mA, glass passivated junction transient voltage suppressor | SURGE | DO-201AE | 2 | -65°C | 175°C | 227K |
| 304. | 1.5KE24C | 24 V, 1 mA, glass passivated junction transient voltage suppressor | SURGE | DO-201AE | 2 | -65°C | 175°C | 227K |
| 305. | 1.5KE24CA | 24 V, 1 mA, glass passivated junction transient voltage suppressor | SURGE | DO-201AE | 2 | -65°C | 175°C | 227K |
| 306. | LCE24A | 24.00V; 1mA ;1500W peak pulse power; low capacitance transient voltage suppressor. Ideal for data line applications | MDE | DO-201 | 2 | -55°C | 175°C | 424K |
| 307. | NTE2429 | Silicon complementary PNP transistor. General purpose switch. | NTE | SOT-89 | 3 | 0°C | 150°C | 22K |
| 308. | NTE243 | Silicon complementary NPN transistor. Darlington power amplifier. | NTE | TO3 | 2 | -65°C | 200°C | 26K |
| 309. | NTE2431 | Silicon PNP transistor. High voltage amp/switch (compl to 2430). | NTE | SOT-89 | 3 | 0°C | 150°C | 19K |
| 310. | NTE244 | Silicon complementary PNP transistor. Darlington power amplifier. | NTE | TO3 | 2 | -65°C | 200°C | -- |
| 311. | NTE246 | Silicon complementary PNP transistor. Darlington power amplifier. | NTE | TO3 | 2 | -65°C | 200°C | 25K |
| 312. | NTE247 | Silicon complementary NPN transistor. Darlington power amplifier. | NTE | TO3 | 2 | -65°C | 200°C | 26K |
| 313. | NTE247 | Silicon complementary NPN transistor. Darlington power amplifier. | NTE | TO3 | 2 | -65°C | 200°C | 26K |
| 314. | NTE248 | Silicon complementary PNP transistor. Darlington power amplifier. | NTE | TO3 | 2 | -65°C | 200°C | 26K |
| 315. | NTE249 | Silicon complementary NPN transistor. Darlington power amplifier. | NTE | TO3 | 2 | -55°C | 200°C | 25K |
| 316. | P4KE24A | 20.50V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | - | 2 | -55°C | 175°C | 844K |
| 317. | P6KE24A | 20.50V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | DO-15 | 2 | -55°C | 175°C | 468K |
| 318. | P6KE24A | 24 V, 1 mA, 600 W, glass passivated junction transient voltage suppressor | SURGE | DO-15 | 2 | -65°C | 175°C | 201K |
| 319. | P6KE24C | 24 V, 1 mA, 600 W, glass passivated junction transient voltage suppressor | SURGE | DO-15 | 2 | -65°C | 175°C | 201K |
| 320. | P6KE24CA | 24 V, 1 mA, 600 W, glass passivated junction transient voltage suppressor | SURGE | DO-15 | 2 | -65°C | 175°C | 201K |
