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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 961. | 1.5KE200 | 162.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor | MDE | DO-201 | 2 | -55°C | 175°C | 658K |
| 962. | 1.5KE200A | 171.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor | MDE | DO-201 | 2 | -55°C | 175°C | 658K |
| 963. | 1V5KE200A | Transient Voltage Suppressors | FAIR | - | - | - | - | 85K |
| 964. | 1V5KE200CA | Transient Voltage Suppressors | FAIR | - | - | - | - | 85K |
| 965. | 1V5KE20A | Transient Voltage Suppressors | FAIR | - | - | - | - | 85K |
| 966. | 1V5KE20CA | Transient Voltage Suppressors | FAIR | - | - | - | - | 85K |
| 967. | HGT4E20N60A4DS | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | FAIR | - | - | - | - | -- |
| 968. | KSE200 | NPN Epitaxial Silicon Transistor | FAIR | - | - | - | - | 42K |
| 969. | LBE2003S | NPN microwave power transistor | PHLPS | SOT | 4 | - | - | 78K |
| 970. | LBE2009S | NPN microwave power transistor | PHLPS | SOT | 4 | - | - | 78K |
| 971. | LCE20A | 20.00V; 1mA ;1500W peak pulse power; low capacitance transient voltage suppressor. Ideal for data line applications | MDE | DO-201 | 2 | -55°C | 175°C | 424K |
| 972. | LWE2010S | NPN microwave power transistor | PHLPS | SOT | 3 | - | - | 74K |
| 973. | LWE2010S | NPN microwave power transistor | PHLPS | SOT | 3 | - | - | 74K |
| 974. | MJE200 | NPN Epitaxial Silicon Transistor | FAIR | - | - | - | - | 42K |
| 975. | P4KE200 | 162.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | - | 2 | -55°C | 175°C | 844K |
| 976. | P4KE200A | 171.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | - | 2 | -55°C | 175°C | 844K |
| 977. | P4KE20A | 17.10V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | - | 2 | -55°C | 175°C | 844K |
| 978. | P6KE200 | 162.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | DO-15 | 2 | -55°C | 175°C | 468K |
| 979. | P6KE200A | 171.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | DO-15 | 2 | -55°C | 175°C | 468K |
| 980. | P6KE20A | 17.10V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | DO-15 | 2 | -55°C | 175°C | 468K |
