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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 681. | 1.5KE180 | 146.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor | MDE | DO-201 | 2 | -55°C | 175°C | 658K |
| 682. | 1.5KE180A | 154.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications | MDE | - | - | -55°C | 175°C | 582K |
| 683. | 1.5KE180A | 154.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor | MDE | DO-201 | 2 | -55°C | 175°C | 658K |
| 684. | 1.5KE18A | 14.50V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor | MDE | DO-201 | 2 | -55°C | 175°C | 658K |
| 685. | LCE18A | 18.00V; 1mA ;1500W peak pulse power; low capacitance transient voltage suppressor. Ideal for data line applications | MDE | DO-201 | 2 | -55°C | 175°C | 424K |
| 686. | LFE18500X | NPN silicon planar epitaxial microwave power transistor | PHLPS | SOT | 3 | - | - | 62K |
| 687. | LFE18500X | NPN silicon planar epitaxial microwave power transistor | PHLPS | SOT | 3 | - | - | 62K |
| 688. | LLE18010X | NPN microwave power transistor | PHLPS | SOT | 3 | - | - | 84K |
| 689. | LLE18040X | NPN microwave power transistor | PHLPS | SOT | 3 | - | - | 82K |
| 690. | LLE18100X | NPN microwave power transistor | PHLPS | SOT | 3 | - | - | 60K |
| 691. | LLE18150X | NPN microwave power transistor | PHLPS | SOT | 3 | - | - | 52K |
| 692. | LLE18300X | NPN microwave power transistor | PHLPS | SOT | 3 | - | - | 89K |
| 693. | LXE18300X | NPN microwave power transistor | PHLPS | SOT | 3 | - | - | 51K |
| 694. | LXE18400X | NPN microwave power transistor | PHLPS | SOT | 3 | - | - | 93K |
| 695. | P4KE180 | 146.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | - | 2 | -55°C | 175°C | 844K |
| 696. | P4KE180A | 154.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | - | 2 | -55°C | 175°C | 844K |
| 697. | P4KE18A | 14.50V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | - | 2 | -55°C | 175°C | 844K |
| 698. | P6KE180 | 146.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | DO-15 | 2 | -55°C | 175°C | 468K |
| 699. | P6KE180A | 154.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | DO-15 | 2 | -55°C | 175°C | 468K |
| 700. | P6KE18A | 14.50V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | DO-15 | 2 | -55°C | 175°C | 468K |
