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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 261. | 1.5KE130 | 105.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications | MDE | - | - | -55°C | 175°C | 582K |
| 262. | 1.5KE130 | 105.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor | MDE | DO-201 | 2 | -55°C | 175°C | 658K |
| 263. | 1.5KE130A | 111.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications | MDE | - | - | -55°C | 175°C | 582K |
| 264. | 1.5KE130A | 111.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor | MDE | DO-201 | 2 | -55°C | 175°C | 658K |
| 265. | ARE1303 | RE-relay. 2.6 GHz 75 ohm relays for broadcasting industry. Standard PC board terminal. Nominal voltage 3 V DC. | NAIS | - | 9 | -40°C | 60°C | 111K |
| 266. | ARE1309 | RE-relay. 2.6 GHz 75 ohm relays for broadcasting industry. Standard PC board terminal. Nominal voltage 9 V DC. | NAIS | - | 9 | -40°C | 60°C | 111K |
| 267. | KSE13003 | NPN Silicon Transistor | FAIR | - | - | - | - | 48K |
| 268. | KSE13003T | NPN Silicon Transistor | FAIR | - | - | - | - | 47K |
| 269. | KSE13005 | NPN Silicon Transistor | FAIR | - | - | - | - | 48K |
| 270. | KSE13005F | NPN Silicon Transistor | FAIR | - | - | - | - | 53K |
| 271. | KSE13008 | NPN Silicon Transistor | FAIR | - | - | - | - | 48K |
| 272. | KSE13009F | NPN Silicon Transistor | FAIR | - | - | - | - | 48K |
| 273. | KSE13009L | NPN Silicon Transistor | FAIR | - | - | - | - | 43K |
| 274. | MJE13003 | Switching Transistor | KEC | - | - | - | - | 394K |
| 275. | P4KE130 | 105.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | - | 2 | -55°C | 175°C | 844K |
| 276. | P4KE130A | 111.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | - | 2 | -55°C | 175°C | 844K |
| 277. | P6KE130 | 105.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | DO-15 | 2 | -55°C | 175°C | 468K |
| 278. | P6KE130 | 130 V, 1 mA, 600 W, glass passivated junction transient voltage suppressor | SURGE | DO-15 | 2 | -65°C | 175°C | 201K |
| 279. | P6KE130A | 111.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | DO-15 | 2 | -55°C | 175°C | 468K |
| 280. | P6KE130C | 130 V, 1 mA, 600 W, glass passivated junction transient voltage suppressor | SURGE | DO-15 | 2 | -65°C | 175°C | 201K |
