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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 61. | AS8E128K32PN-120/883C | 128K x 32 EEPROM memory array | AUSTN | PGA | 66 | -55°C | 125°C | 392K |
| 62. | AS8E128K32PN-140/883C | 128K x 32 EEPROM memory array | AUSTN | PGA | 66 | -55°C | 125°C | 392K |
| 63. | AS8E128K32PN-140/XT | 128K x 32 EEPROM memory array | AUSTN | PGA | 66 | -55°C | 125°C | 392K |
| 64. | AS8E128K32PN-150/883C | 128K x 32 EEPROM memory array | AUSTN | PGA | 66 | -55°C | 125°C | 392K |
| 65. | AS8E128K32PN-150/XT | 128K x 32 EEPROM memory array | AUSTN | PGA | 66 | -55°C | 125°C | 392K |
| 66. | AS8E128K32PN-200/883C | 128K x 32 EEPROM memory array | AUSTN | PGA | 66 | -55°C | 125°C | 392K |
| 67. | AS8E128K32PN-200/XT | 128K x 32 EEPROM memory array | AUSTN | PGA | 66 | -55°C | 125°C | 392K |
| 68. | AS8E128K32PN-200/XT | 128K x 32 EEPROM memory array | AUSTN | PGA | 66 | -55°C | 125°C | 392K |
| 69. | AS8E128K32PN-250/883C | 128K x 32 EEPROM memory array | AUSTN | PGA | 66 | -55°C | 125°C | 392K |
| 70. | AS8E128K32PN-250/XT | 128K x 32 EEPROM memory array | AUSTN | PGA | 66 | -55°C | 125°C | 392K |
| 71. | AS8E128K32PN-300/883C | 128K x 32 EEPROM memory array | AUSTN | PGA | 66 | -55°C | 125°C | 392K |
| 72. | AS8E128K32PN-300/XT | 128K x 32 EEPROM memory array | AUSTN | PGA | 66 | -55°C | 125°C | 392K |
| 73. | AS8E128K32Q-15/IT | 128K x 32 EEPROM radiation tolerant memory array | AUSTN | CQFP | 68 | -40°C | 85°C | 181K |
| 74. | AS8E128K32Q-15/XT | 128K x 32 EEPROM radiation tolerant memory array | AUSTN | CQFP | 68 | -55°C | 105°C | 181K |
| 75. | VTE1281-1 | GaAlAs infrared emitting diode. Irradiance(typ) 3.3 mW/cm2 (distance 36 mm, diameter 6.4 mm). | PERK | T-1.75 | 2 | -40°C | 100°C | 32K |
| 76. | VTE1281-2 | GaAlAs infrared emitting diode. Irradiance(typ) 6.5 mW/cm2 (distance 36 mm, diameter 6.4 mm). | PERK | T-1.75 | 2 | -40°C | 100°C | 32K |
| 77. | VTE1281F | GaAlAs infrared emitting diode. Irradiance(typ) 0.21 mW/cm2 (distance 36 mm, diameter 6.4 mm). | PERK | T-1.75 | 2 | -40°C | 100°C | 24K |
| 78. | VTE1281W-1 | GaAlAs infrared emitting diode. Irradiance(typ) 1.6 mW/cm2 (distance 36 mm, diameter 6.4 mm). | PERK | T-1.75 | 2 | -40°C | 100°C | 32K |
| 79. | VTE1281W-2 | GaAlAs infrared emitting diode. Irradiance(typ) 3.3 mW/cm2 (distance 36 mm, diameter 6.4 mm). | PERK | T-1.75 | 2 | -40°C | 100°C | 32K |
| 80. | XCCACE128-I | 128-Mbit ACE flash card. | XILIX | CF type I | - | -40°C | 85°C | 1M |
