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Found: 835      Displaying: 681 - 700
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
681.
APE10006PE-relay. The slim power relay. 1 form A. Coil voltage 6 V DC. Silver alloy without Au-plated. Single contact.
NAIS
-
4
-40°C
85°C
85K
682.
APE10012PE-relay. The slim power relay. 1 form A. Coil voltage 12 V DC. Silver alloy without Au-plated. Single contact.
NAIS
-
4
-40°C
85°C
85K
683.
APE10018PE-relay. The slim power relay. 1 form A. Coil voltage 18 V DC. Silver alloy without Au-plated. Single contact.
NAIS
-
4
-40°C
85°C
85K
684.
APE10024PE-relay. The slim power relay. 1 form A. Coil voltage 24 V DC. Silver alloy without Au-plated. Single contact.
NAIS
-
4
-40°C
85°C
85K
685.
APE10048PE-relay. The slim power relay. 1 form A. Coil voltage 48 V DC. Silver alloy without Au-plated. Single contact.
NAIS
-
4
-40°C
85°C
85K
686.
APE1004HPE-relay. The slim power relay. 1 form A. Coil voltage 4.5 V DC. Silver alloy without Au-plated. Single contact.
NAIS
-
4
-40°C
85°C
85K
687.
APE10106PE-relay. The slim power relay. 1 form A. Coil voltage 6 V DC. Silver alloy with Au-plated. Single contact.
NAIS
-
4
-40°C
85°C
85K
688.
APE10112PE-relay. The slim power relay. 1 form A. Coil voltage 12 V DC. Silver alloy with Au-plated. Single contact.
NAIS
-
4
-40°C
85°C
85K
689.
APE10118PE-relay. The slim power relay. 1 form A. Coil voltage 18 V DC. Silver alloy with Au-plated. Single contact.
NAIS
-
4
-40°C
85°C
85K
690.
APE10124PE-relay. The slim power relay. 1 form A. Coil voltage 24 V DC. Silver alloy with Au-plated. Single contact.
NAIS
-
4
-40°C
85°C
85K
691.
APE1014HPE-relay. The slim power relay. 1 form A. Coil voltage 4.5 V DC. Silver alloy with Au-plated. Single contact.
NAIS
-
4
-40°C
85°C
85K
692.
LCE10A10.00V; 1mA ;1500W peak pulse power; low capacitance transient voltage suppressor. Ideal for data line applications
MDE
DO-201
2
-55°C
175°C
424K
693.
LEE1015TNPN microwave power transistor
PHLPS
SOT
4
-
-
47K
694.
P4KE10081.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
MDE
-
2
-55°C
175°C
844K
695.
P4KE100A85.50V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
MDE
-
2
-55°C
175°C
844K
696.
P4KE10A8.55V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
MDE
-
2
-55°C
175°C
844K
697.
P6KE10081.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
MDE
DO-15
2
-55°C
175°C
468K
698.
P6KE100A85.50V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
MDE
DO-15
2
-55°C
175°C
468K
699.
P6KE10A8.55V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
MDE
DO-15
2
-55°C
175°C
468K
700.
TMS320C57SPGE10016-Bit digital signal processor, data RAM=544 words, data+prog=512 words, ROM=2K, 5.0V, 100MHz
TI
TQFP
144
0°C
70°C
1M
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