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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 244 Displaying: 181 - 200| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 181. | FY4ADJ-03A | 30V trench gate dual MOSFET | PWRX | SOP-8 | - | - | - | 43K | | 182. | FY4ADJ-03A | 30V trench gate dual MOSFET | PWRX | SOP-8 | - | - | - | 43K | | 183. | KM416C254DJ-5 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period | SMSNG | SOJ | 40 | 0°C | 70°C | 840K | | 184. | KM416C254DJ-6 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period | SMSNG | SOJ | 40 | 0°C | 70°C | 840K | | 185. | KM416C254DJ-7 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period | SMSNG | SOJ | 40 | 0°C | 70°C | 840K | | 186. | KM416V254DJ-5 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period | SMSNG | SOJ | 40 | 0°C | 70°C | 840K | | 187. | KM416V254DJ-6 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period | SMSNG | SOJ | 40 | 0°C | 70°C | 840K | | 188. | KM416V254DJ-7 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period | SMSNG | SOJ | 40 | 0°C | 70°C | 840K | | 189. | MT4LC4M4E8DJ-5 | 4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 50ns | MICRN | SOJ | 24 | 0°C | 70°C | 291K | | 190. | MT4LC4M4E8DJ-6 | 4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 60ns | MICRN | SOJ | 24 | 0°C | 70°C | 291K | | 191. | MT4LC4M4E9DJ-5 | 4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 50ns | MICRN | SOJ | 24 | 0°C | 70°C | 291K | | 192. | MT4LC4M4E9DJ-6 | 4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 60ns | MICRN | SOJ | 24 | 0°C | 70°C | 291K | | 193. | TMS44400DJ-70 | 1048576-word by 4-bit dynamic random-access memories, 70 ns, 5.0V | TI | SOJ | 20 | 0°C | 70°C | 657K | | 194. | TMS46400DJ-60 | 1048576-word by 4-bit dynamic random-access memories, 60 ns, 3.3V, low power | TI | SOJ | 20 | 0°C | 70°C | 657K | | 195. | TMS46400DJ-70 | 1048576-word by 4-bit dynamic random-access memories, 70 ns, 3.3V, low power | TI | SOJ | 20 | 0°C | 70°C | 657K | | 196. | TMS46400DJ-80 | 1048576-word by 4-bit dynamic random-access memories, 80 ns, 3.3V, low power | TI | SOJ | 20 | 0°C | 70°C | 657K | | 197. | TMS46400PDJ-60 | 1048576-word by 4-bit dynamic random-access memories, 60 ns, 3.3V, self-refresh | TI | SOJ | 20 | 0°C | 70°C | 657K | | 198. | TMS46400PDJ-70 | 1048576-word by 4-bit dynamic random-access memories, 70 ns, 3.3V, self-refresh | TI | SOJ | 20 | 0°C | 70°C | 657K | | 199. | TMS46400PDJ-80 | 1048576-word by 4-bit dynamic random-access memories, 80 ns, 3.3V, self-refresh | TI | SOJ | 20 | 0°C | 70°C | 657K | | 200. | TMS46400PDJ-80 | 1048576-word by 4-bit dynamic random-access memories, 80 ns, 3.3V, self-refresh | TI | SOJ | 20 | 0°C | 70°C | 657K |
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