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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 21. | 2SD880Y | NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 20 @ Ic = 3A. Pd = 30W. | USHA | TO-220 | 3 | -55°C | 150°C | 47K |
| 22. | 2SD882 | NPN power transistor, 40V, 3A | NEC | - | 3 | -55°C | 150°C | 165K |
| 23. | AD8801AN | 0.3-8V; 450-500mW; octal 8-bit trimDAC with power shutdown | AD | DIP | 16 | -40°C | 85°C | 175K |
| 24. | AD8801AR | 0.3-8V; 450-500mW; octal 8-bit trimDAC with power shutdown | AD | SOIC | 16 | -40°C | 85°C | 175K |
| 25. | AD8802AN | 0.3-8V; 0.9-1.3W; 12-channel, 8-bit trimDAC with power shutdown. For automatic adjustment, trimmer replacement | AD | DIP | 20 | -40°C | 85°C | 380K |
| 26. | AD8802AR | 0.3-8V; 0.9-1.3W; 12-channel, 8-bit trimDAC with power shutdown. For automatic adjustment, trimmer replacement | AD | SOL | 20 | -40°C | 85°C | 380K |
| 27. | AD8802ARU | 0.3-8V; 0.9-1.3W; 12-channel, 8-bit trimDAC with power shutdown. For automatic adjustment, trimmer replacement | AD | TSSOP | 20 | -40°C | 85°C | 380K |
| 28. | AD8803AN | 0.3-8V; 450-500mW; octal 8-bit trimDAC with power shutdown | AD | DIP | 16 | -40°C | 85°C | 175K |
| 29. | AD8803AR | 0.3-8V; 450-500mW; octal 8-bit trimDAC with power shutdown | AD | SOIC | 16 | -40°C | 85°C | 175K |
| 30. | AD883B | 18V; 250mW; 1mA; real-time analog computational unit (ACU). For one-or-two quadrant mult/div | AD | DIP | 18 | -55°C | 125°C | 79K |
| 31. | AD8842AN | 0.3-7V; 8-bit octal, 4-quadrant multiplying, CMOS trimDAC. For automatic adjustment, trimmer replacement | AD | DIP | 24 | -55°C | 125°C | 395K |
| 32. | AD8842AR | 0.3-7V; 8-bit octal, 4-quadrant multiplying, CMOS trimDAC. For automatic adjustment, trimmer replacement | AD | SOIC | 24 | -55°C | 125°C | 395K |
| 33. | HSD880 | Emitter to base voltage:7V 3A NPN epitaxial planar transistor for low frequency power amplifier applications | HSMC | TO220AB | 3 | - | - | 34K |
| 34. | HSD882 | Emitter to base voltage:5V 3A NPN epitaxial planar transistor for using in output stage of 1W audio amplifier | HSMC | TO-126ML | 3 | - | - | 40K |
| 35. | HSD882S | Emitter to base voltage:5V 3A NPN epitaxial planar transistor for the output stage of 0.75W audio, voltage regulator and relay driver | HSMC | - | 3 | - | - | 42K |
| 36. | PJD882CK | 40V; 3A; NPN epitaxial silicon transistor | PROMX | TO-126 | 3 | -20°C | 85°C | 184K |
| 37. | PJD882CT | 40V; 3A; NPN epitaxial silicon transistor | PROMX | - | 3 | -20°C | 85°C | 184K |
| 38. | SD880T | Schottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward rectified current at Tc = 75degC 8.0 A. | PAJIT | TO-251AB | 4 | -55°C | 125°C | 43K |
| 39. | SD880YT | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward rectified current at Tc = 85degC 8.0 A. | PAJIT | TO-251AB | 4 | -55°C | 125°C | 38K |
| 40. | SD880YT | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward rectified current at Tc = 85degC 8.0 A. | PAJIT | TO-251AB | 4 | -55°C | 125°C | 38K |
