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Found: 414      Displaying: 81 - 100
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
81.
2SD313NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 @ Ic = 2A. Pd = 30W.
USHA
TO-220
3
-55°C
150°C
46K
82.
CSD3120H1200V, 400A phase control single scr thyristor
PWRX
-
-
-
-
78K
83.
LND-PKD310Peak sample & hold with offset + ampliefier
LIND
SOIC
28
-
-
51K
84.
PSD311R-B-70JProgrammable system device, 14 PLD inputs, EPROM=256K, bus width x8, 5V, 70ns
WSI
PLDCC
44
0°C
70°C
478K
85.
PSD311R-B-90JIProgrammable system device, 14 PLD inputs, EPROM=256K, bus width x8, 5V, 90ns
WSI
PLDCC
44
-40°C
85°C
478K
86.
PSD312-B-70MProgrammable system device, 18 PLD inputs, EPROM=512K, SRAM=16K, bus width x8, 5V, 70ns
WSI
PQFP
44
0°C
70°C
478K
87.
PSD312-B-70UProgrammable system device, 18 PLD inputs, EPROM=512K, SRAM=16K, bus width x8, 5V, 70ns
WSI
TQFP
44
0°C
70°C
478K
88.
PSD312-B-90JIProgrammable system device, 18 PLD inputs, EPROM=512K, SRAM=16K, bus width x8, 5V, 90ns
WSI
PLDCC
44
-40°C
85°C
478K
89.
PSD313R-B-15JProgrammable system device, 18 PLD inputs, EPROM=1Mb, bus width x8, 5V, 150ns
WSI
PLDCC
44
0°C
70°C
478K
90.
PSD313R-B-90JIProgrammable system device, 18 PLD inputs, EPROM=1Mb, bus width x8, 5V, 90ns
WSI
PLDCC
44
-40°C
85°C
478K
91.
SD3100SSurfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current at Tc = 75degC 3 A.
PAJIT
TO-252
4
-55°C
125°C
40K
92.
SD3100TSurfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current at Tc = 75degC 3 A.
PAJIT
TO-251AB
4
-55°C
125°C
40K
93.
SD3100YTSurfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current at Tc = 75degC 3 A.
PAJIT
TO-251AB
4
-55°C
125°C
40K
94.
SD310DEHigh-speed analog N-Channel DMOS FET improved on-resistance
CALOG
TO-72
4
-55°C
125°C
35K
95.
SD312DEHigh-speed analog N-Channel DMOS FET improved on-resistance
CALOG
TO-72
4
-55°C
125°C
35K
96.
SD314DEHigh-speed analog N-Channel DMOS FET improved on-resistance
CALOG
TO-72
4
-55°C
125°C
35K
97.
VTD31AAAlternate source/second source photodiode. Isc = 150-225 microA, Voc = 350 mV at H = 0.5 mW/cm2, 2850 K.
PERK
Ceramic
2
-20°C
75°C
25K
98.
XSD310High-speed analog N-Channel DMOS FET improved on-resistance
CALOG
SMD
4
-55°C
125°C
35K
99.
XSD312High-speed analog N-Channel DMOS FET improved on-resistance
CALOG
SMD
4
-55°C
125°C
35K
100.
XSD314High-speed analog N-Channel DMOS FET improved on-resistance
CALOG
SMD
4
-55°C
125°C
35K
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