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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 41. | BD242 | NPN Epitaxial Silicon Transistor | FAIR | - | - | - | - | 27K |
| 42. | BD242 | 4mW NPN silicon epitaxial base power transistor | ME | TO-220B | 3 | -55°C | 150°C | 98K |
| 43. | BD242 | 55 V, PNP silicon power transistor | TEL | TO-220 | 3 | -65°C | 150°C | 476K |
| 44. | BD242 | 55 V, PNP silicon power transistor | TRSYS | TO-220 | 3 | -65°C | 150°C | 476K |
| 45. | BD242A | PNP Epitaxial Silicon Transistor | FAIR | - | - | - | - | 27K |
| 46. | BD242A | 4mW NPN silicon epitaxial base power transistor | ME | TO-220B | 3 | -55°C | 150°C | 98K |
| 47. | BD242A | 70 V, PNP silicon power transistor | TEL | TO-220 | 3 | -65°C | 150°C | 476K |
| 48. | BD242A | 70 V, PNP silicon power transistor | TRSYS | TO-220 | 3 | -65°C | 150°C | 476K |
| 49. | BD242A | PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. | USHA | TO-220 | 3 | -65°C | 150°C | 47K |
| 50. | BD242B | 4mW NPN silicon epitaxial base power transistor | ME | TO-220B | 3 | -55°C | 150°C | 98K |
| 51. | BD242B | 90 V, PNP silicon power transistor | TEL | TO-220 | 3 | -65°C | 150°C | 476K |
| 52. | BD242B | 90 V, PNP silicon power transistor | TRSYS | TO-220 | 3 | -65°C | 150°C | 476K |
| 53. | BD242B | PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. | USHA | TO-220 | 3 | -65°C | 150°C | 47K |
| 54. | BD242C | 100 V, complementary PNP silicon power transistor | BOCA | TO-220 | 3 | -65°C | 150°C | 139K |
| 55. | BD242C | PNP Epitaxial Silicon Transistor | FAIR | - | - | - | - | 27K |
| 56. | BD242C | 115 V, PNP silicon power transistor | TEL | TO-220 | 3 | -65°C | 150°C | 476K |
| 57. | BD242C | 115 V, PNP silicon power transistor | TRSYS | TO-220 | 3 | -65°C | 150°C | 476K |
| 58. | BD242C | PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. | USHA | TO-220 | 3 | -65°C | 150°C | 47K |
