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Found: 463      Displaying: 321 - 340
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
321.
BD241ANPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W
USHA
TO-220
3
-65°C
150°C
47K
322.
BD241BNPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W
USHA
TO-220
3
-65°C
150°C
47K
323.
BD241CNPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W
USHA
TO-220
3
-65°C
150°C
47K
324.
BD242APNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W.
USHA
TO-220
3
-65°C
150°C
47K
325.
BD242BPNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W.
USHA
TO-220
3
-65°C
150°C
47K
326.
BD242CPNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W.
USHA
TO-220
3
-65°C
150°C
47K
327.
BD243ANPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W
USHA
TO-220
3
-65°C
150°C
47K
328.
BD243BNPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W
USHA
TO-220
3
-65°C
150°C
47K
329.
BD243CNPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W
USHA
TO-220
3
-65°C
150°C
47K
330.
BD244APNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W.
USHA
TO-220
3
-65°C
150°C
47K
331.
BD244BPNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W.
USHA
TO-220
3
-65°C
150°C
47K
332.
BD244CPNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W.
USHA
TO-220
3
-65°C
150°C
47K
333.
D240/02Rectifier diode. All purpose high power rectifier diodes, non-controllable and half controlleed rectifiers. Vrrm = 200V, Vrsm = 300V.
USHA
B
2
0°C
180°C
110K
334.
D240/02Rectifier diode. All purpose high power rectifier diodes, non-controllable and half controlleed rectifiers. Vrrm = 200V, Vrsm = 300V.
USHA
H
2
0°C
180°C
110K
335.
D240/04Rectifier diode. All purpose high power rectifier diodes, non-controllable and half controlleed rectifiers. Vrrm = 400V, Vrsm = 500V.
USHA
B
2
0°C
180°C
110K
336.
D240/08Rectifier diode. All purpose high power rectifier diodes, non-controllable and half controlleed rectifiers. Vrrm = 800V, Vrsm = 900V.
USHA
B
2
0°C
180°C
110K
337.
D240/12Rectifier diode. All purpose high power rectifier diodes, non-controllable and half controlleed rectifiers. Vrrm = 1200V, Vrsm = 1300V.
USHA
B
2
0°C
180°C
110K
338.
D240/16Rectifier diode. All purpose high power rectifier diodes, non-controllable and half controlleed rectifiers. Vrrm = 1600V, Vrsm = 1700V.
USHA
B
2
0°C
180°C
110K
339.
GC89SRBD24RIns.Lenght: 70mm; Bolt Lenght: 140mm; bar clamp for hockey punks
GPSEM
-
-
-
-
788K
340.
GC89SRBD24RSIns.Lenght: 70mm; Bolt Lenght: 140mm; bar clamp for hockey punks
GPSEM
-
-
-
-
788K
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