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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 21. | 2SD1226M | NPN transistor for medium power amplifier, 80V 0.7A | ROHM | - | 3 | -55°C | 150°C | 207K |
| 22. | GNR25D122K | Varistor. Max allowable voltage: ACrms=750V, DC=980V. Varistor voltage 1080-1320V. | CRMT | - | 2 | -40°C | 85°C | 57K |
| 23. | HD122 | 100V 4A NPN epitaxial silicon darlington transistor for medium power linear and switching applications | HSMC | TO-126ML | 3 | - | - | 40K |
| 24. | KSD1221 | NPN Epitaxial Silicon Transistor | FAIR | - | - | - | - | 39K |
| 25. | KSD1222 | NPN Epitaxial Silicon Transistor | FAIR | - | - | - | - | 39K |
| 26. | MDE-20D122K | 1200V; max peak current:75000A; metal oxide varistor. Standard D series 20mm disc | MDE | - | 2 | - | - | 77K |
| 27. | MDE-25D122K | 1200V; max peak current:18000A; metal oxide varistor. Standard D series 25mm disc | MDE | - | 2 | - | - | 87K |
| 28. | MDE-32D122K | 1200V; max peak current:25000A; metal oxide varistor. High energy series 32mm single disc | MDE | - | 2 | - | - | 75K |
| 29. | MDE-40D122K | 1200V; max peak current:40000A; metal oxide varistor. High energy series 40mm single disc | MDE | - | 2 | - | - | 82K |
| 30. | MDE-53D122K | 1200V; max peak current:70000A; metal oxide varistor. High energy series 53mm single disc | MDE | - | 2 | - | - | 74K |
| 31. | MJD122 | NPN transistor, for general purpose amplifier and low speed switching applications, 100V, 8A | FAIR | TO-252 | 3 | -65°C | 150°C | 137K |
| 32. | MJD122-1 | NPN transistor, for general purpose amplifier and low speed switching applications, 100V, 8A | FAIR | TO-251 | 3 | -65°C | 150°C | 137K |
| 33. | MJD122-1 | NPN transistor for high DC current gain, 100V, 8A | ON | TO-251 | 3 | -65°C | 150°C | 137K |
| 34. | MJD122-1 | NPN darlington transistor for high DC current gain, 100V, 5A | STM | TO-252 | 3 | -65°C | 150°C | 91K |
| 35. | MJD122-1 | NPN transistor for high DC current gain, 100V, 8A | ON | TO-251 | 3 | -65°C | 150°C | 137K |
| 36. | MJD122T4 | NPN transistor, for general purpose amplifier and low speed switching applications, 100V, 8A | FAIR | TO-252 | 3 | -65°C | 150°C | 137K |
| 37. | MJD122T4 | NPN transistor for high DC current gain, 100V, 8A | ON | TO-252 | 3 | -65°C | 150°C | 137K |
| 38. | MJD122T4 | NPN darlington transistor for high DC current gain, 100V, 5A | STM | TO-252 | 3 | -65°C | 150°C | 91K |
| 39. | QED122 | PLASTIC INFRARED LIGHT EMITTING DIODE | FAIR | - | - | - | - | 358K |
| 40. | QRD1220T30 | 1200V, 200A fast recovery dual diode | PWRX | - | - | - | - | 112K |
| 41. | QSD122 | PLASTIC SILICON INFRARED PHOTODARLINGTON | FAIR | - | - | - | - | 93K |
