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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 993 Displaying: 481 - 500| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 481. | ESMD-C50H | 80-2500 MHz, surface mount mixer | MACOM | SM | 6 | -40°C | 85°C | 143K | | 482. | ESMD-C50HTR | 80-2500 MHz, surface mount mixer | MACOM | SM | 6 | -40°C | 85°C | 143K | | 483. | ESMD-C50M | 80-2500 MHz,surface mount mixer | MACOM | SM | 6 | -40°C | 85°C | 168K | | 484. | ESMD-C50MTR | 80-2500 MHz,surface mount mixer | MACOM | SM | 6 | -40°C | 85°C | 168K | | 485. | GMS81C5024 | ROM/RAM size:24 Kb/448 bytes, 4 MHz, 2.2-5.5 V, 8 BIT single chip microcontroller | HYNIX | PLCC | 44 | 0°C | 70°C | 1M | | 486. | GMS81C5024 | ROM/RAM size:24 Kb/448 bytes, 4 MHz, 2.2-5.5 V, 8 BIT single chip microcontroller | HYNIX | QFP | 44 | 0°C | 70°C | 1M | | 487. | GMS81C5032 | ROM/RAM size:32 Kb/448 bytes, 4 MHz, 2.2-5.5 V, 8 BIT single chip microcontroller | HYNIX | QFP | 44 | 0°C | 70°C | 1M | | 488. | IRFPC50A | HEXFET power MOSFET. VDSS = 600 V, RDS(on) = 0.58 Ohm, ID = 11 A | IRF | TO-247AC GDS | 3 | -55°C | 150°C | 95K | | 489. | IRG4PC50K | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.84V @ VGE = 15V, IC = 30A | IRF | TO-247AC | 3 | -55°C | 150°C | 115K | | 490. | IRG4PC50S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.28V @ VGE = 15V, IC = 41A | IRF | TO-247AC | 3 | -55°C | 150°C | 164K | | 491. | IRG4PC50U | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.65V @ VGE = 15V, IC = 27A | IRF | TO-247AC | 3 | -55°C | 150°C | 147K | | 492. | IRG4PC50UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.65V @ VGE = 15V, IC = 27A | IRF | TO-247AC | 3 | -55°C | 150°C | 213K | | 493. | IRG4PC50W | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.3V @ VGE = 15V, IC = 27A | IRF | TO-247AC | 3 | -55°C | 150°C | 157K | | 494. | PC50F2 | 200 V, 50 A, diode | NIHON | - | 3 | -40°C | 150°C | 29K | | 495. | PC50F4 | 400 V, 50 A, diode | NIHON | - | 3 | -40°C | 150°C | 29K | | 496. | PC50F5 | 500 V, 50 A, diode | NIHON | - | 3 | -40°C | 150°C | 29K | | 497. | PC50F6 | 600 V, 50 A, diode | NIHON | - | 3 | -40°C | 150°C | 29K | | 498. | ZRC500A02 | Precision 5 V low knee current voltage reference | ZETEX | E-Line | 3 | -40°C | 85°C | 72K | | 499. | ZRC500A02 | Precision 5 V low knee current voltage reference | ZETEX | E-Line | 3 | -40°C | 85°C | 72K | | 500. | ZRC500A03 | Precision 5 V low knee current voltage reference | ZETEX | E-Line | 3 | -40°C | 85°C | 72K | | 501. | ZRC500A03 | Precision 5 V low knee current voltage reference | ZETEX | E-Line | 3 | -40°C | 85°C | 72K |
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