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Found: 963      Displaying: 481 - 500
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
481.
C30T03QL30 V, diode
NIHON
TO
3
-40°C
150°C
30K
482.
C30T03QL-11A30 V, diode
NIHON
TO
3
-40°C
150°C
30K
483.
C30T03QLH30 V, diode
NIHON
TO
3
-40°C
150°C
30K
484.
C30T03QLH-11A30 V, diode
NIHON
TO
3
-40°C
150°C
30K
485.
IRG4BC30KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
IRF
-
3
-55°C
150°C
196K
486.
IRG4BC30KD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
IRF
DDPak
3
-55°C
150°C
225K
487.
IRG4BC30SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 18A
IRF
-
3
-55°C
150°C
161K
488.
IRG4BC30UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A
IRF
-
3
-55°C
150°C
167K
489.
IRG4BC30U-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A
IRF
DDPak
3
-55°C
150°C
308K
490.
IRG4BC30UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A
IRF
-
3
-55°C
150°C
234K
491.
IRG4BC30WInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.70V @ VGE = 15V, IC = 12A
IRF
-
3
-55°C
150°C
139K
492.
IRG4BC30W-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.10V @ VGE = 15V, IC = 12A
IRF
DDPak
3
-55°C
150°C
188K
493.
IRG4PC30FDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A
IRF
TO-247AC
3
-55°C
150°C
210K
494.
IRG4PC30KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
IRF
TO-247AC
3
-55°C
150°C
121K
495.
IRG4PC30KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
IRF
TO-247AC
3
-55°C
150°C
178K
496.
IRG4PC30KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
IRF
TO-247AC
3
-55°C
150°C
178K
497.
IRG4PC30SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 18A
IRF
TO-247AC
3
-55°C
150°C
120K
498.
IRG4PC30UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A
IRF
TO-247AC
3
-55°C
150°C
145K
499.
IRG4PC30UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A
IRF
TO-247AC
3
-55°C
150°C
211K
500.
IRG4PC30WInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.70V @ VGE = 15V, IC = 12A
IRF
TO-247AC
3
-55°C
150°C
123K
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