We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet.com is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
All Data provided on this web site and the associated web pages is provided as is. It is intended to be for general information only, and is thus provided without any express or implied warranty or guarantee. It is the responsibility of the user or reader to ensure and confirm that this information is accurate and correct with the original publisher of the data sheet.
Most of the data sheets below are in the "pdf" format so it would be adviseable to use Adobe Acrobat Reader.
| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 341. | 1SMC26A | 26 V, 1500Watt, Uni-directional glass passivated junction transient voltage suppressor | CENTR | SMC | - | -65°C | 150°C | 144K |
| 342. | 1SMC26A | 26 V, 1500Watt, Uni-directional glass passivated junction transient voltage suppressor | CENTR | SMC | - | -65°C | 150°C | 144K |
| 343. | 2SC2603 | 300mW NPN silicon transistor | ME | TO-92B | 3 | -55°C | 150°C | 74K |
| 344. | 3SMC26A | 26 V, 3000Watt, Uni-directional glass passivated junction transient voltage suppressor | CENTR | SMC | - | -65°C | 150°C | 142K |
| 345. | 3SMC26CA | 26 V, 3000Watt, Bi-directional glass passivated junction transient voltage suppressor | CENTR | SMC | - | -65°C | 150°C | 141K |
| 346. | BC261 | 360mW PNP high gain low noise silicon planar epitaxial transistor | ME | TO-18 | 3 | -65°C | 200°C | 94K |
| 347. | BC262 | 360mW PNP high gain low noise silicon planar epitaxial transistor | ME | TO-18 | 3 | -65°C | 200°C | 94K |
| 348. | BC263 | 360mW PNP high gain low noise silicon planar epitaxial transistor | ME | TO-18 | 3 | -65°C | 200°C | 94K |
| 349. | IXFC26N50 | 500V HiPerFET power MOSFET | IXYS | ISOPLUS220 | 3 | -55°C | 150°C | 67K |
| 350. | MCC26-08IO1 | 800V thyristor modules thyristor/diode module | IXYS | - | 7 | -40°C | 125°C | 177K |
| 351. | MCC26-08IO8 | 800V thyristor modules thyristor/diode module | IXYS | - | 7 | -40°C | 125°C | 177K |
| 352. | MCC26-12IO1 | 1200V thyristor modules thyristor/diode module | IXYS | - | 7 | -40°C | 125°C | 177K |
| 353. | MCC26-12IO8 | 1200V thyristor modules thyristor/diode module | IXYS | - | 7 | -40°C | 125°C | 177K |
| 354. | MCC26-14IO1 | 1400V thyristor modules thyristor/diode module | IXYS | - | 7 | -40°C | 125°C | 177K |
| 355. | MCC26-14IO8 | 1400V thyristor modules thyristor/diode module | IXYS | - | 7 | -40°C | 125°C | 177K |
| 356. | MCC26-16IO1 | 1600V thyristor modules thyristor/diode module | IXYS | - | 7 | -40°C | 125°C | 177K |
| 357. | MCC26-16IO8 | 1600V thyristor modules thyristor/diode module | IXYS | - | 7 | -40°C | 125°C | 177K |
| 358. | TC54VC2601ECBTR | Voltage detector, CMOS output, 2.6V, +/-1% | MCHIP | SOT-23A | 3 | -40°C | 85°C | 215K |
| 359. | TC54VC2601ECTTR | Voltage detector, CMOS output, 2.6V, +/-1% | MCHIP | SOT-23A | 5 | -40°C | 85°C | 215K |
| 360. | TC54VC2601EMBTR | Voltage detector, CMOS output, 2.6V, +/-1% | MCHIP | SOT-89 | 3 | -40°C | 85°C | 215K |
