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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 401. | EC-10N16 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. | EXICO | TO3P | 3 | -55°C | 150°C | 227K |
| 402. | EC-10N16 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. | EXICO | TO247 | 3 | -55°C | 150°C | 227K |
| 403. | EC-10N16 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. | EXICO | TO3 | 3 | -55°C | 150°C | 227K |
| 404. | EC-10N20 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. | EXICO | TO247 | 3 | -55°C | 150°C | 227K |
| 405. | EC-10N20 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. | EXICO | TO3 | 3 | -55°C | 150°C | 227K |
| 406. | EC-10N20 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. | EXICO | TO3P | 3 | -55°C | 150°C | 227K |
| 407. | EC-10P16 | P-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. | EXICO | TO247 | 3 | -55°C | 150°C | 227K |
| 408. | EC-10P16 | P-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. | EXICO | TO3P | 3 | -55°C | 150°C | 227K |
| 409. | EC-10P16 | P-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. | EXICO | TO3 | 3 | -55°C | 150°C | 227K |
| 410. | EC-10P20 | P-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. | EXICO | TO3 | 3 | -55°C | 150°C | 227K |
| 411. | EC-10P20 | P-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. | EXICO | TO3P | 3 | -55°C | 150°C | 227K |
| 412. | EC-10P20 | P-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. | EXICO | TO247 | 3 | -55°C | 150°C | 227K |
| 413. | GAL16LV8C-10LJ | Low voltage E2CMOS PLD generic array logic, 10ns | LATIC | PLCC | 20 | 0°C | 70°C | 338K |
| 414. | MT48LC4M32LFFC-10 | 1Meg x 32 x 4 banks; 100MHz synchronous DRAM | MICRN | FBGA | 90 | 0°C | 70°C | 1M |
| 415. | MT48LC8M16LFFC-10 | 2Meg x 16 x 4 banks; 100MHz synchronous DRAM | MICRN | FBGA | 90 | 0°C | 70°C | 1M |
| 416. | MT48V4M32LFFC-10 | 1Meg x 32 x 4 banks; 100MHz synchronous DRAM | MICRN | FBGA | 90 | 0°C | 70°C | 1M |
| 417. | MT48V8M16LFFC-10 | 2Meg x 16 x 4 banks; 100MHz synchronous DRAM | MICRN | FBGA | 90 | 0°C | 70°C | 1M |
| 418. | PIC-1018SMB | Infrared receiver module. High immunity against noise. | WAITR | - | 3 | -10°C | 60°C | 204K |
| 419. | PIC-1023SMB | Infrared receiver module. High immunity against noise. | WAITR | - | 3 | -10°C | 60°C | 221K |
| 420. | REC-1005SRWL | 10W DC/DC converter with 10V input, 5/2000mA output | RECOM | DIL | 6 | -25°C | 70°C | 82K |
