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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 21. | BC307 | PNP silicon amplifier transistor | MOT | - | 3 | -55°C | 150°C | 110K |
| 22. | BC307B | PNP silicon amplifier transistor | MOT | - | 3 | -55°C | 150°C | 110K |
| 23. | BC307C | PNP silicon amplifier transistor | MOT | - | 3 | -55°C | 150°C | 110K |
| 24. | BC308C | PNP silicon amplifier transistor | MOT | - | 3 | -55°C | 150°C | 110K |
| 25. | BC309B | PNP silicon amplifier transistor | MOT | - | 3 | -55°C | 150°C | 110K |
| 26. | IRFBC30 | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A | IRF | - | 3 | -55°C | 150°C | 173K |
| 27. | IRFBC30A | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A | IRF | - | 3 | -55°C | 150°C | 101K |
| 28. | IRFBC30AS | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A | IRF | DDPak | 3 | -55°C | 150°C | 147K |
| 29. | IRFBC30L | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A | IRF | TO-262 | 3 | -55°C | 150°C | 147K |
| 30. | IRFBC30S | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A | IRF | DDPak | 3 | -55°C | 150°C | 362K |
| 31. | IRFIBC30G | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 2.5 A | IRF | TO-220 FULLPAK | 3 | -55°C | 150°C | 169K |
| 32. | IRG4BC30 | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A | IRF | - | 3 | -55°C | 150°C | 167K |
| 33. | IRG4BC30FD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A | IRF | - | 3 | -55°C | 150°C | 412K |
| 34. | IRG4BC30K-S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A | IRF | DDPak | 3 | -55°C | 150°C | 161K |
| 35. | IRG4BC30K-S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A | IRF | DDPak | 3 | -55°C | 150°C | 161K |
| 36. | IRGBC30K-S | Insulated gate bipolar transistor | IRF | SMD-220 | 3 | -55°C | 150°C | 266K |
| 37. | IRGBC30M-S | Insulated gate bipolar transistor | IRF | SMD-220 | 3 | -55°C | 150°C | 250K |
| 38. | IRGBC30S | Insulated gate bipolar transistor | IRF | - | 3 | -55°C | 150°C | 252K |
| 39. | IRGBC30U | Insulated gate bipolar transistor | IRF | - | 3 | -55°C | 150°C | 244K |
| 40. | MC78BC30NTR | Micropower voltage regulator | MOT | SOT-23 | 5 | -30°C | 80°C | 98K |
