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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 61. | BU806 | NPN Epitaxial Silicon Darlington Transistor | FAIR | - | - | - | - | 41K |
| 62. | BU807 | NPN Epitaxial Silicon Darlington Transistor | FAIR | - | - | - | - | 41K |
| 63. | GBU8005 | 50V; 8.0A glass passivated bridge rectifier | DIODS | Molded Plastic | 4 | -55°C | 150°C | 67K |
| 64. | KBU800 | Single phase 8.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 50V. | JGD | KBU | 4 | -55°C | 125°C | 139K |
| 65. | KBU800G | Single phase 8.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 50V. | JGD | KBU | 4 | -55°C | 150°C | 138K |
| 66. | KBU801 | Single phase 8.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 100V. | JGD | KBU | 4 | -55°C | 125°C | 139K |
| 67. | KBU801G | Single phase 8.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 100V. | JGD | KBU | 4 | -55°C | 150°C | 138K |
| 68. | KBU802G | Single phase 8.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 200V. | JGD | KBU | 4 | -55°C | 150°C | 138K |
| 69. | KBU804 | Single phase 8.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 400V. | JGD | KBU | 4 | -55°C | 125°C | 139K |
| 70. | KBU804G | Single phase 8.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 400V. | JGD | KBU | 4 | -55°C | 150°C | 138K |
| 71. | KBU806 | Single phase 8.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 600V. | JGD | KBU | 4 | -55°C | 125°C | 139K |
| 72. | KBU806G | Single phase 8.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 600V. | JGD | KBU | 4 | -55°C | 150°C | 138K |
| 73. | KBU808 | Single phase 8.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 800V. | JGD | KBU | 4 | -55°C | 125°C | 139K |
| 74. | KBU808G | Single phase 8.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 800V. | JGD | KBU | 4 | -55°C | 150°C | 138K |
