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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 81. | BU1506DX | 1500 V, silicon diffused power transistor | PHLPS | SOT | 3 | - | - | 53K |
| 82. | BU1507DX | 1500 V, silicon diffused power transistor | PHLPS | SOT | 3 | - | - | 46K |
| 83. | BU1706A | 1750 V, silicon diffused power transistor | PHLPS | SOT | 3 | - | - | 59K |
| 84. | BU1706AX | 1750 V, silicon diffused power transistor | PHLPS | SOT | 3 | - | - | 60K |
| 85. | GBU10005 | 50V; 10A glass passivated bridge rectifier. Ideal for printed circuit board applications | DIODS | GBU | 4 | -55°C | 150°C | 53K |
| 86. | GBU1001 | 100V; 10A glass passivated bridge rectifier. Ideal for printed circuit board applications | DIODS | GBU | 4 | -55°C | 150°C | 53K |
| 87. | GBU1002 | 200V; 10A glass passivated bridge rectifier. Ideal for printed circuit board applications | DIODS | GBU | 4 | -55°C | 150°C | 53K |
| 88. | GBU1004 | 400V; 10A glass passivated bridge rectifier. Ideal for printed circuit board applications | DIODS | GBU | 4 | -55°C | 150°C | 53K |
| 89. | GBU1006 | 600V; 10A glass passivated bridge rectifier. Ideal for printed circuit board applications | DIODS | GBU | 4 | -55°C | 150°C | 53K |
| 90. | GBU1008 | 800V; 10A glass passivated bridge rectifier. Ideal for printed circuit board applications | DIODS | GBU | 4 | -55°C | 150°C | 53K |
| 91. | GBU1010 | 1000V; 10A glass passivated bridge rectifier. Ideal for printed circuit board applications | DIODS | GBU | 4 | -55°C | 150°C | 53K |
| 92. | KBU1000 | Single phase 10.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 50V. | JGD | KBU | 4 | -55°C | 125°C | 134K |
| 93. | KBU1000G | Single phase 10.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 50V. | JGD | KBU | 4 | -55°C | 150°C | 131K |
| 94. | KBU1001 | Single phase 10.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 100V. | JGD | KBU | 4 | -55°C | 125°C | 134K |
| 95. | KBU1001G | Single phase 10.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 100V. | JGD | KBU | 4 | -55°C | 150°C | 131K |
| 96. | KBU1002 | Single phase 10.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 200V. | JGD | KBU | 4 | -55°C | 125°C | 134K |
| 97. | KBU1006 | Single phase 10.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 600V. | JGD | KBU | 4 | -55°C | 125°C | 134K |
| 98. | KBU1008 | Single phase 10.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 800V. | JGD | KBU | 4 | -55°C | 125°C | 134K |
| 99. | KBU1010 | Single phase 10.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 1000V. | JGD | KBU | 4 | -55°C | 125°C | 134K |
| 100. | PBU1001 | 50V; 10A bridge rectifier | DIODS | Molded Plastic | 4 | -65°C | 150°C | 70K |
