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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 161. | CLT3-4BT6-TR | CURRENT LIMITED OVER-VOLTAGE PROTECTED QUAD DIGITAL TERMINATION | STM | - | - | - | - | 99K |
| 162. | HMBT6427 | Emitter to base voltage:12V; 500mA NPN epitaxial planar transistor | HSMC | SOT23 | 3 | - | - | 28K |
| 163. | HMBT6429 | Emitter to base voltage:6V; 200mA NPN epitaxial planar transistor | HSMC | SOT23 | 3 | - | - | 29K |
| 164. | HMBT6517 | Emitter to base voltage:5V; 250mA NPN epitaxial planar transistor for general purpose applications | HSMC | SOT-23 | 3 | - | - | 31K |
| 165. | HMBT6520 | Emitter to base voltage:5V; 250mA PNP epitaxial planar transistor for general purpose applications | HSMC | SOT-23 | 3 | - | - | 29K |
| 166. | MMBT6027 | Silicon programmable unijunction transistor (PUTs). Anode-to-cathode voltage +-40V. | PLNT | SOT-23 | 3 | - | - | 16K |
| 167. | MMBT6028 | Silicon programmable unijunction transistor (PUTs). Anode-to-cathode voltage +-40V. | PLNT | SOT-23 | 3 | - | - | 16K |
| 168. | MMBT6427 | 40V; 500mA NPN surface mount darlington transistor. Ideal for medium power application and switching | DIODS | SOT-23 | 3 | -55°C | 150°C | 47K |
| 169. | MMBT6427LT1 | 40 V, darlington transistor | LRC | SOT-23 | 3 | -55°C | 150°C | 203K |
| 170. | MMBT6428LT1 | 50 V, amplifier transistor | LRC | SOT-23 | 3 | -55°C | 150°C | 209K |
| 171. | MMBT6429LT1 | 45 V, amplifier transistor | LRC | SOT-23 | 3 | -55°C | 150°C | 209K |
| 172. | MMBT6517LT1 | 350 V, high voltage transistor | LRC | SOT-23 | 3 | -55°C | 150°C | 169K |
| 173. | MMBT6520LT1 | 350 V, high voltage transistor | LRC | SOT-23 | 3 | -55°C | 150°C | 167K |
| 174. | MMBT6918LT1 | 15 V, VHF/UFH transistor | LRC | SOT-23 | 3 | -55°C | 150°C | 58K |
| 175. | PMBT6428 | NPN general purpose transistor. | PHLPS | SOT23 | 3 | -65°C | 150°C | 51K |
| 176. | PMBT6429 | NPN general purpose transistor. | PHLPS | SOT23 | 3 | -65°C | 150°C | 51K |
| 177. | PMBT6429 | NPN general purpose transistor. | PHLPS | SOT23 | 3 | -65°C | 150°C | 51K |
| 178. | SBT60 | 60 V, 2.5 A, schottky barrier rectifier diode | EIC | D2A | 2 | -65°C | 150°C | 28K |
| 179. | SBT60S | 60 V, 2.5 A, schottky barrier rectifier diode | EIC | D2 | 2 | -65°C | 150°C | 62K |
