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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
261. | AME8815AEBT330 | Output voltage: 3.30V; 1.5A CMOS LDO | AME | TO-220 | 3 | -40°C | 85°C | 113K |
262. | AME8815BEBT330 | Output voltage: 3.30V; 1.5A CMOS LDO | AME | TO-220 | 3 | -40°C | 85°C | 113K |
263. | MMBT3640LT1 | Switching transistor | MOT | SOT-23 | 3 | -55°C | 150°C | 176K |
264. | MMBT3904 | 40 V, general purpose transistor NPN silicon | ZOWIE | SOT | 3 | -55°C | 150°C | 121K |
265. | MMBT3904 | 40 V, general purpose transistor NPN silicon | ZOWIE | SOT | 3 | -55°C | 150°C | 121K |
266. | MMBT3904WT1 | General purpose transistor | MOT | SOT-323 | 3 | -55°C | 150°C | 296K |
267. | MMBT3906 | 40 V, general purpose transistor NPN silicon | ZOWIE | SOT | 3 | -55°C | 150°C | 107K |
268. | MMBT3906 | 40 V, general purpose transistor NPN silicon | ZOWIE | SOT | 3 | -55°C | 150°C | 107K |
269. | MMBT3906LT1 | General purpose transistor | MOT | SOT-23 | 3 | -55°C | 150°C | 221K |
270. | MMBT3906WT1 | General purpose transistor | MOT | SOT-323 | 3 | -55°C | 150°C | 296K |
271. | MP03HBT360-08 | 800V dual thyristor, thyristor/diode module | DYNEX | MP03 | 2 | - | - | 262K |
272. | MP03HBT360-10 | 1000V dual thyristor, thyristor/diode module | DYNEX | MP03 | 2 | - | - | 262K |
273. | MP03HBT360-12 | 1200V dual thyristor, thyristor/diode module | DYNEX | MP03 | 2 | - | - | 262K |
274. | MP03HBT360-14 | 1400V dual thyristor, thyristor/diode module | DYNEX | MP03 | 2 | - | - | 262K |
275. | MP03HBT360-16 | 1600V dual thyristor, thyristor/diode module | DYNEX | MP03 | 2 | - | - | 262K |
276. | MP03HBT360-18 | 1800V dual thyristor, thyristor/diode module | DYNEX | MP03 | 2 | - | - | 262K |
277. | SBT30 | 30 V, 2.5 A, schottky barrier rectifier diode | EIC | D2A | 2 | -65°C | 125°C | 28K |
278. | SBT30S | 30 V, 2.5 A, schottky barrier rectifier diode | EIC | D2 | 2 | -65°C | 125°C | 62K |
279. | WMBT3904 | NPN epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A | WINGS | SOT-89 | 3 | - | - | 66K |
280. | WMBT3906 | PNP epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A | WINGS | SOT-89 | 3 | - | - | 66K |