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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 141. | BS616UV1610FC | 70/100ns 25mA 1.8-2.3V ultra low power/voltage CMOS SRAM 1M x 16bit | BSI | BGA | 48 | 0°C | 70°C | 217K |
| 142. | BS616UV1620BC | 70/100ns 25mA 1.8-2.3V ultra low power/voltage CMOS SRAM 1M x 16 or 2M x 8bit switchable | BSI | BGA | 48 | 0°C | 70°C | 215K |
| 143. | BS616UV1620BI | 70/100ns 25mA 1.8-2.3V ultra low power/voltage CMOS SRAM 1M x 16 or 2M x 8bit switchable | BSI | BGA | 48 | -40°C | 85°C | 215K |
| 144. | BS616UV1620FC | 70/100ns 25mA 1.8-2.3V ultra low power/voltage CMOS SRAM 1M x 16 or 2M x 8bit switchable | BSI | BGA | 48 | 0°C | 70°C | 215K |
| 145. | BS616UV1620FI | 70/100ns 25mA 1.8-2.3V ultra low power/voltage CMOS SRAM 1M x 16 or 2M x 8bit switchable | BSI | BGA | 48 | -40°C | 85°C | 215K |
| 146. | BS616UV4010BC | 70/100ns 15-20mA 1.8-3.6V ultra low power/voltage CMOS SRAM 256K x 16bit | BSI | COG | 48 | 0°C | 70°C | 218K |
| 147. | BS616UV4010BI | 70/100ns 15-20mA 1.8-3.6V ultra low power/voltage CMOS SRAM 256K x 16bit | BSI | BGA | 48 | -40°C | 85°C | 218K |
| 148. | BS616UV4010DC | 70/100ns 15-20mA 1.8-3.6V ultra low power/voltage CMOS SRAM 256K x 16bit | BSI | DICE | 48 | 0°C | 70°C | 218K |
| 149. | BS616UV4010DI | 70/100ns 15-20mA 1.8-3.6V ultra low power/voltage CMOS SRAM 256K x 16bit | BSI | DICE | 48 | -40°C | 85°C | 218K |
| 150. | BS616UV4010EC | 70/100ns 15-20mA 1.8-3.6V ultra low power/voltage CMOS SRAM 256K x 16bit | BSI | TSOP | 44 | 0°C | 70°C | 218K |
| 151. | BS616UV4010EI | 70/100ns 15-20mA 1.8-3.6V ultra low power/voltage CMOS SRAM 256K x 16bit | BSI | TSOP | 44 | -40°C | 85°C | 218K |
| 152. | BS616UV4020BC | 70/100ns 15-20mA 1.8-3.6V ultra low power/voltage CMOS SRAM 256K x 16 or 512K x 8bit switchable | BSI | BGA | 48 | 0°C | 70°C | 212K |
| 153. | BS616UV4020BI | 70/100ns 15-20mA 1.8-3.6V ultra low power/voltage CMOS SRAM 256K x 16 or 512K x 8bit switchable | BSI | BGA | 48 | -40°C | 85°C | 212K |
| 154. | BS616UV4020DC | 70/100ns 15-20mA 1.8-3.6V ultra low power/voltage CMOS SRAM 256K x 16 or 512K x 8bit switchable | BSI | DICE | 48 | 0°C | 70°C | 212K |
| 155. | BS616UV4020DI | 70/100ns 15-20mA 1.8-3.6V ultra low power/voltage CMOS SRAM 256K x 16 or 512K x 8bit switchable | BSI | DICE | 48 | -40°C | 85°C | 212K |
| 156. | BS616UV8010BC | 70/100ns 15-20mA 1.8-3.6V ultra low power/voltage CMOS SRAM 512K x 16bit | BSI | BGA | 48 | 0°C | 70°C | 208K |
| 157. | BS616UV8010BI | 70/100ns 15-20mA 1.8-3.6V ultra low power/voltage CMOS SRAM 512K x 16bit | BSI | BGA | 48 | -40°C | 85°C | 208K |
| 158. | BS616UV8011BI | 70/100ns 15-20mA 1.8-2.3V ultra low power/voltage CMOS SRAM 512K x 16bit | BSI | BGA | 48 | -40°C | 85°C | 221K |
| 159. | BS616UV8011DC | 70/100ns 15-20mA 1.8-2.3V ultra low power/voltage CMOS SRAM 512K x 16bit | BSI | DICE | 48 | 0°C | 70°C | 221K |
| 160. | BS616UV8011DI | 70/100ns 15-20mA 1.8-2.3V ultra low power/voltage CMOS SRAM 512K x 16bit | BSI | DICE | 48 | -40°C | 85°C | 221K |
