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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 61. | BS616LV2018AC | 70ns 16mA 2.4-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit | BSI | BGA | 48 | 0°C | 70°C | 220K |
| 62. | BS616LV2018AI | 70ns 16mA 2.4-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit | BSI | BGA | 48 | -40°C | 85°C | 220K |
| 63. | BS616LV2018DI | 70ns 16mA 2.4-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit | BSI | DICE | 48 | -40°C | 85°C | 220K |
| 64. | BS616LV2018TC | 70ns 16mA 2.4-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit | BSI | TSOP | 48 | 0°C | 70°C | 220K |
| 65. | BS616LV2018TI | 70ns 16mA 2.4-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit | BSI | TSOP | 48 | -40°C | 85°C | 220K |
| 66. | BS616LV2021AC | 70/100ns 20-40mA 2.4-5.5V ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable | BSI | BGA | 48 | 0°C | 70°C | 254K |
| 67. | BS616LV2021AI | 70/100ns 20-40mA 2.4-5.5V ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable | BSI | BGA | 48 | 0°C | 85°C | 254K |
| 68. | BS616LV2021DC | 70/100ns 20-40mA 2.4-5.5V ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable | BSI | DICE | 48 | 0°C | 70°C | 254K |
| 69. | BS616LV2021DI | 70/100ns 20-40mA 2.4-5.5V ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable | BSI | DICE | 48 | 0°C | 85°C | 254K |
| 70. | BS616LV2023AC | 70/100ns 20mA 2.4-3.6V ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable | BSI | BGA | 48 | 0°C | 70°C | 249K |
| 71. | BS616LV2023AI | 70/100ns 20mA 2.4-3.6V ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable | BSI | BGA | 48 | -40°C | 85°C | 249K |
| 72. | BS616LV2023DC | 70/100ns 20mA 2.4-3.6V ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable | BSI | DICE | 48 | 0°C | 70°C | 249K |
| 73. | BS616LV2023DI | 70/100ns 20mA 2.4-3.6V ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable | BSI | DICE | 48 | -40°C | 85°C | 249K |
| 74. | BS616LV2025AC | 70/55ns 40mA 4.5-5.5V ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable | BSI | BGA | 48 | 0°C | 70°C | 253K |
| 75. | BS616LV2025AI | 70/55ns 40mA 4.5-5.5V ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable | BSI | BGA | 48 | -40°C | 85°C | 253K |
| 76. | BS616LV2025DC | 70/55ns 40mA 4.5-5.5V ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable | BSI | DICE | 48 | 0°C | 70°C | 253K |
| 77. | BS616LV2025DI | 70/55ns 40mA 4.5-5.5V ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable | BSI | DICE | 48 | -40°C | 85°C | 253K |
| 78. | BS616LV4010DC | 70/100ns 20mA 2.7-3.6V ultra low power/voltage CMOS SRAM 256K x 16bit | BSI | DICE | 48 | 0°C | 70°C | 227K |
| 79. | BS616LV4010DI | 70/100ns 20mA 2.7-3.6V ultra low power/voltage CMOS SRAM 256K x 16bit | BSI | DICE | 48 | -40°C | 85°C | 227K |
| 80. | BS616LV4010EI | 70/100ns 20mA 2.7-3.6V ultra low power/voltage CMOS SRAM 256K x 16bit | BSI | TSOP | 44 | -40°C | 85°C | 227K |
