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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 141. | AME8500AEFTBF31 | Reset time: 210mS; micropower uP reset device | AME | SOT-89 | 3 | -40°C | 85°C | 70K |
| 142. | AME8500BEETBF31 | Reset time: 210mS; micropower uP reset device | AME | SOT-23 | 3 | -40°C | 85°C | 70K |
| 143. | AME8500BEFTBF31 | Reset time: 210mS; micropower uP reset device | AME | SOT-89 | 3 | -40°C | 85°C | 70K |
| 144. | AME8500CEETBF31 | Reset time: 210mS; micropower uP reset device | AME | SOT-23 | 3 | -40°C | 85°C | 70K |
| 145. | AME8500CEFTBF31 | Reset time: 210mS; micropower uP reset device | AME | SOT-89 | 3 | -40°C | 85°C | 70K |
| 146. | AME8501AEETBF31 | Reset time: 210mS; micropower uP reset device | AME | SOT-23 | 3 | -40°C | 85°C | 70K |
| 147. | AME8501AEFTBF31 | Reset time: 210mS; micropower uP reset device | AME | SOT-89 | 3 | -40°C | 85°C | 70K |
| 148. | AME8501BEETBF31 | Reset time: 210mS; micropower uP reset device | AME | SOT-23 | 3 | -40°C | 85°C | 70K |
| 149. | AME8501BEFTBF31 | Reset time: 210mS; micropower uP reset device | AME | SOT-89 | 3 | -40°C | 85°C | 70K |
| 150. | AME8501CEETBF31 | Reset time: 210mS; micropower uP reset device | AME | SOT-23 | 3 | -40°C | 85°C | 70K |
| 151. | AME8501CEFTBF31 | Reset time: 210mS; micropower uP reset device | AME | SOT-89 | 3 | -40°C | 85°C | 70K |
| 152. | BF314 | 300mW NPN high frequency silicon planar epitaxial transistor | ME | TO-92F | 3 | -55°C | 150°C | 83K |
| 153. | BF324 | PNP medium frequency transistor. | PHLPS | - | 3 | -65°C | 150°C | 58K |
| 154. | BF391 | 625mW NPN high voltage video amplifier | ME | TO-92A | 3 | -55°C | 150°C | 139K |
| 155. | BF392 | 625mW NPN high voltage video amplifier | ME | TO-92A | 3 | -55°C | 150°C | 139K |
| 156. | BF393 | 625mW NPN high voltage video amplifier | ME | TO-92A | 3 | -55°C | 150°C | 139K |
| 157. | BF397 | 625mW PNP silicon transistor | ME | TO-92F | 3 | -55°C | 150°C | 84K |
| 158. | BF398 | 625mW PNP silicon transistor | ME | TO-92F | 3 | -55°C | 150°C | 68K |
| 159. | IRFBF30 | HEXFET power MOSFET. VDSS = 900V, RDS(on) = 3.7 Ohm, ID = 3.6A | IRF | - | 3 | -55°C | 150°C | 166K |
| 160. | IRFIBF30G | HEXFET power MOSFET. VDSS = 900V, RDS(on) = 3.7 Ohm, ID = 1.9A | IRF | TO-220 FULLPAK | 3 | -55°C | 150°C | 167K |
