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Found: 187      Displaying: 121 - 140
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
121.
BD24055 V, PNP silicon power transistor
TRSYS
TO-220
3
-65°C
150°C
474K
122.
BD240A70 V, PNP silicon power transistor
TRSYS
TO-220
3
-65°C
150°C
474K
123.
BD240B90 V, PNP silicon power transistor
TRSYS
TO-220
3
-65°C
150°C
474K
124.
BD240C115 V, PNP silicon power transistor
TRSYS
TO-220
3
-65°C
150°C
474K
125.
BD24155 V, NPN silicon power transistor
TRSYS
TO-220
3
-65°C
150°C
432K
126.
BD241A70 V, NPN silicon power transistor
TRSYS
TO-220
3
-65°C
150°C
432K
127.
BD241ANPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W
USHA
TO-220
3
-65°C
150°C
47K
128.
BD241B90 V, NPN silicon power transistor
TRSYS
TO-220
3
-65°C
150°C
432K
129.
BD241BNPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W
USHA
TO-220
3
-65°C
150°C
47K
130.
BD241C115 V, NPN silicon power transistor
TRSYS
TO-220
3
-65°C
150°C
432K
131.
BD241CNPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W
USHA
TO-220
3
-65°C
150°C
47K
132.
BD242APNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W.
USHA
TO-220
3
-65°C
150°C
47K
133.
BD242BPNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W.
USHA
TO-220
3
-65°C
150°C
47K
134.
BD242CPNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W.
USHA
TO-220
3
-65°C
150°C
47K
135.
BD243ANPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W
USHA
TO-220
3
-65°C
150°C
47K
136.
BD243BNPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W
USHA
TO-220
3
-65°C
150°C
47K
137.
BD243CNPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W
USHA
TO-220
3
-65°C
150°C
47K
138.
BD244APNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W.
USHA
TO-220
3
-65°C
150°C
47K
139.
BD244BPNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W.
USHA
TO-220
3
-65°C
150°C
47K
140.
BD244CPNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W.
USHA
TO-220
3
-65°C
150°C
47K
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