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Found: 413      Displaying: 241 - 260
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
241.
AME8501BEFTBD27Reset time: 30mS; micropower uP reset device
AME
SOT-89
3
-40°C
85°C
70K
242.
AME8501BEFTBD28Reset time: 30mS; micropower uP reset device
AME
SOT-89
3
-40°C
85°C
70K
243.
AME8501BEFTBD29Reset time: 30mS; micropower uP reset device
AME
SOT-89
3
-40°C
85°C
70K
244.
AME8501CEFTBD21Reset time: 30mS; micropower uP reset device
AME
SOT-89
3
-40°C
85°C
70K
245.
AME8501CEFTBD24Reset time: 30mS; micropower uP reset device
AME
SOT-89
3
-40°C
85°C
70K
246.
AME8501CEFTBD26Reset time: 30mS; micropower uP reset device
AME
SOT-89
3
-40°C
85°C
70K
247.
AME8501CEFTBD28Reset time: 30mS; micropower uP reset device
AME
SOT-89
3
-40°C
85°C
70K
248.
AME8501CEFTBD29Reset time: 30mS; micropower uP reset device
AME
SOT-89
3
-40°C
85°C
70K
249.
BD2414mW NPN silicon epitaxial base power transistor
ME
TO-220B
3
-55°C
150°C
97K
250.
BD241A4mW NPN silicon epitaxial base power transistor
ME
TO-220B
3
-55°C
150°C
97K
251.
BD241B4mW NPN silicon epitaxial base power transistor
ME
TO-220B
3
-55°C
150°C
97K
252.
BD2424mW NPN silicon epitaxial base power transistor
ME
TO-220B
3
-55°C
150°C
98K
253.
BD242A4mW NPN silicon epitaxial base power transistor
ME
TO-220B
3
-55°C
150°C
98K
254.
BD242B4mW NPN silicon epitaxial base power transistor
ME
TO-220B
3
-55°C
150°C
98K
255.
MMBD283535 V, 100mA monolithic dual switching diode
ZOWIE
SOT
3
-55°C
150°C
49K
256.
MMBD283535 V, 100mA monolithic dual switching diode
ZOWIE
SOT
3
-55°C
150°C
49K
257.
MMBD283675 V, monolithic dual switching diode
ZOWIE
SOT
3
-55°C
150°C
49K
258.
MMBD283675 V, monolithic dual switching diode
ZOWIE
SOT
3
-55°C
150°C
49K
259.
MMBD283775 V, monolithic dual switching diode
ZOWIE
SOT
3
-55°C
150°C
49K
260.
MMBD283775 V, monolithic dual switching diode
ZOWIE
SOT
3
-55°C
150°C
49K
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