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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 95 Displaying: 61 - 80| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 61. | AME8501CEETBC46 | Reset time: 30mS; micropower uP reset device | AME | SOT-23 | 3 | -40°C | 85°C | 70K | | 62. | BC413 | 300mW PNP silicon AF low noise small signal transistor | ME | TO-92F | 3 | -55°C | 150°C | 130K | | 63. | BC414 | 300mW PNP silicon AF low noise small signal transistor | ME | TO-92F | 3 | -55°C | 150°C | 130K | | 64. | BC415 | 300mW PNP silicon AF low noise small signal transistor | ME | TO-92F | 3 | -55°C | 150°C | 130K | | 65. | BC416 | 300mW PNP silicon AF low noise small signal transistor | ME | TO-92F | 3 | -55°C | 150°C | 130K | | 66. | IRFBC40A | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 6.2A | IRF | - | 3 | -55°C | 150°C | 97K | | 67. | IRFBC40AS | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 6.2A | IRF | DDPak | 3 | -55°C | 150°C | 111K | | 68. | IRFBC40L | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 6.2A | IRF | TO-262 | 3 | -55°C | 150°C | 350K | | 69. | IRFBC40L | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 6.2A | IRF | TO-262 | 3 | -55°C | 150°C | 350K | | 70. | IRFBC40S | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 6.2A | IRF | DDPak | 3 | -55°C | 150°C | 350K | | 71. | IRFIBC40G | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 3.5 A | IRF | TO-220 FULLPAK | 3 | -55°C | 150°C | 170K | | 72. | IRFIBC40GLC | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 3.5 A | IRF | TO-220 FULLPAK | 3 | -55°C | 150°C | 229K | | 73. | IRG4BC40 | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.50V @ VGE = 15V, IC = 27A | IRF | - | 3 | -55°C | 150°C | 167K | | 74. | IRG4BC40K | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.1V @ VGE = 15V, IC = 25A | IRF | - | 3 | -55°C | 150°C | 156K | | 75. | IRG4BC40S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.32V @ VGE = 15V, IC = 31A | IRF | - | 3 | -55°C | 150°C | 157K | | 76. | IRG4BC40U | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.72V @ VGE = 15V, IC = 20A | IRF | - | 3 | -55°C | 150°C | 169K | | 77. | IRG4BC40U | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.72V @ VGE = 15V, IC = 20A | IRF | - | 3 | -55°C | 150°C | 169K | | 78. | IRG4BC40W | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.05V @ VGE = 15V, IC = 20A | IRF | - | 3 | -55°C | 150°C | 129K | | 79. | OR2T40B-4BC432I | ORCA feild-programmable gate array. Voltage 3.3 V. | AGERE | EBGA | 432 | -40°C | 85°C | 3M | | 80. | OR2T40B-4BC432I | ORCA feild-programmable gate array. Voltage 3.3 V. | AGERE | EBGA | 432 | -40°C | 85°C | 3M |
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