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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 201. | BC303 | 850mW NPN silicon AF medium power amplifier | ME | TO-39 | 3 | -55°C | 175°C | 122K |
| 202. | BC304 | 850mW NPN silicon AF medium power amplifier | ME | TO-39 | 3 | -55°C | 175°C | 122K |
| 203. | BC307 | Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. | USHA | - | 3 | 0°C | 150°C | 48K |
| 204. | BC308 | Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. | USHA | - | 3 | 0°C | 150°C | 49K |
| 205. | BC309 | Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. | USHA | - | 3 | 0°C | 150°C | 49K |
| 206. | BC327 | 625mW PNP silicon AF medium power transistor | ME | TO-92F | 3 | -55°C | 150°C | 130K |
| 207. | BC327 | Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 625mW. Collector current Ic = -800mA. | USHA | - | 3 | 0°C | 150°C | 49K |
| 208. | BC328 | 625mW PNP silicon AF medium power transistor | ME | TO-92F | 3 | -55°C | 150°C | 130K |
| 209. | BC328 | Transistor. Switch. and amp. applications. Suitable for AF-driver and power output stages. Vces = -30V, Vceo = -25V, Vebo = -5V. Collector dissipation Pc(max) = 625mW. Ic = -800mA. | USHA | - | 3 | 0°C | 150°C | 46K |
| 210. | BC337 | 625mW NPN silicon AF medium power transistor | ME | TO-92F | 3 | -55°C | 150°C | 140K |
| 211. | BC337 | Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Collector-base Vcbo = 50V. Collector-emitter Vceo= 45V. Emitter-base Vebo = 5V. Collector dissipation Pc = 625mW. Collector current Ic = 800mA. | USHA | - | 3 | 0°C | 150°C | 46K |
| 212. | BC338 | 625mW NPN silicon AF medium power transistor | ME | TO-92F | 3 | -55°C | 150°C | 140K |
| 213. | BC338 | Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Vces = 30V, Vceo= 25V, Vebo = 5V, Pc = 625mW, Ic = 800mA. | USHA | - | 3 | 0°C | 150°C | 46K |
| 214. | BC351 | 300mW PNP silicon transistor | ME | TO-92A | 3 | -55°C | 150°C | 44K |
| 215. | BC368 | 0.8W NPN silicon complementary epitaxial transistor | ME | TO-92B | 3 | -55°C | 150°C | 131K |
| 216. | BC369 | 0.8W PNP silicon complementary epitaxial transistor | ME | TO-92B | 3 | -55°C | 150°C | 131K |
| 217. | HBC327 | 5V 500mA PNP epitaxial planar transistor for driver and output-stages of audio amplifiers | HSMC | - | 3 | - | - | 37K |
| 218. | HBC337 | 5V 800mA NPN epitaxial planar transistor for driver and output-stage of audio amplifier | HSMC | - | 3 | - | - | 37K |
| 219. | HN/BC327 | 50 V, PNP silicon expitaxial planar transistor | HONEY | - | 3 | - | - | 424K |
| 220. | TBC30-12EGWA | 76.2 mm (3.0 inch) 5 x 7 multicolor dot matrix display. High efficiency red, green. | KNBRT | - | 28 | -40°C | 85°C | 122K |
