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Found: 243      Displaying: 181 - 200
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
181.
BC300850mW NPN silicon AF medium power amplifier
ME
TO-39
3
-55°C
175°C
122K
182.
BC301850mW NPN silicon AF medium power amplifier
ME
TO-39
3
-55°C
175°C
122K
183.
BC302850mW NPN silicon AF medium power amplifier
ME
TO-39
3
-55°C
175°C
122K
184.
BC307300mW PNP silicon planar epitaxial transistor
ME
TO-92F
2
-55°C
150°C
225K
185.
BC308300mW PNP silicon planar epitaxial transistor
ME
TO-92F
2
-55°C
150°C
225K
186.
BC309300mW PNP silicon planar epitaxial transistor
ME
TO-92F
2
-55°C
150°C
225K
187.
BC317NPN silicon planar epitaxial transistor
ME
TO-92A
3
-55°C
150°C
228K
188.
BC318NPN silicon planar epitaxial transistor
ME
TO-92A
3
-55°C
150°C
228K
189.
BC319NPN silicon planar epitaxial transistor
ME
TO-92A
3
-55°C
150°C
228K
190.
BC320300mW PNP silicon planar epitaxial transistor
ME
TO-92A
2
-55°C
150°C
225K
191.
BC321300mW PNP silicon planar epitaxial transistor
ME
TO-92A
2
-55°C
150°C
225K
192.
BC322300mW PNP silicon planar epitaxial transistor
ME
TO-92A
2
-55°C
150°C
225K
193.
IRG4BC30KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
IRF
-
3
-55°C
150°C
196K
194.
IRG4BC30KD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
IRF
DDPak
3
-55°C
150°C
225K
195.
IRG4BC30SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 18A
IRF
-
3
-55°C
150°C
161K
196.
IRG4BC30UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A
IRF
-
3
-55°C
150°C
167K
197.
IRG4BC30U-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A
IRF
DDPak
3
-55°C
150°C
308K
198.
IRG4BC30UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A
IRF
-
3
-55°C
150°C
234K
199.
IRG4BC30WInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.70V @ VGE = 15V, IC = 12A
IRF
-
3
-55°C
150°C
139K
200.
IRG4BC30W-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.10V @ VGE = 15V, IC = 12A
IRF
DDPak
3
-55°C
150°C
188K
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