 |
|
We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet.com is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
All Data provided on this web site and the associated web pages is provided as is. It is intended to be for general information only, and is thus provided without any express or implied warranty or guarantee. It is the responsibility of the user or reader to ensure and confirm that this information is accurate and correct with the original publisher of the data sheet.
Most of the data sheets below are in the "pdf" format so it would be adviseable to use Adobe Acrobat Reader.
Why GetDatasheet.com ?
We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 174 Displaying: 61 - 80| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 61. | BC237 | NPN silicon planar epitaxial transistor | ME | TO-92F | 3 | -55°C | 150°C | 228K | | 62. | IRFBC20L | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 4.4 Ohm, ID = 2.2A | IRF | TO-262 | 3 | -55°C | 150°C | 355K | | 63. | IRFIBC20G | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 4.4 Ohm, ID = 1.7 A | IRF | TO-220 FULLPAK | 3 | -55°C | 150°C | 167K | | 64. | IRG4BC20 | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A | IRF | - | 3 | -55°C | 150°C | 161K | | 65. | IRG4BC20FD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A | IRF | - | 3 | -55°C | 150°C | 222K | | 66. | IRG4BC20FD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A | IRF | DDPak | 3 | -55°C | 150°C | 222K | | 67. | IRG4BC20K | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A | IRF | - | 3 | -55°C | 150°C | 138K | | 68. | IRG4BC20K-S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A | IRF | DDPak | 3 | -55°C | 150°C | 162K | | 69. | IRG4BC20KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A | IRF | - | 3 | -55°C | 150°C | 199K | | 70. | IRG4BC20KD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A | IRF | DDPak | 3 | -55°C | 150°C | 222K | | 71. | IRG4BC20MD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 11A | IRF | - | 3 | -55°C | 150°C | 251K | | 72. | IRG4BC20MD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 11A | IRF | DDPak | 3 | -55°C | 150°C | 200K | | 73. | IRG4BC20S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A | IRF | - | 3 | -55°C | 150°C | 157K | | 74. | IRG4BC20SD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A | IRF | - | 3 | -55°C | 150°C | 287K | | 75. | IRG4BC20SD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A | IRF | - | 3 | -55°C | 150°C | 287K | | 76. | IRG4BC20SD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A | IRF | DDPak | 3 | -55°C | 150°C | 382K | | 77. | IRG4BC20U | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 6.5A | IRF | - | 3 | -55°C | 150°C | 167K | | 78. | IRG4BC20UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 6.5A | IRF | - | 3 | -55°C | 150°C | 236K | | 79. | IRG4BC20W | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.16V @ VGE = 15V, IC = 6.5A | IRF | - | 3 | -55°C | 150°C | 130K | | 80. | IRG4BC20W-S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.16V @ VGE = 15V, IC = 6.5A | IRF | DDPak | 3 | -55°C | 150°C | 152K |
Main page
| |
|
