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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 121. | BC107 | NPN silicon planar epitaxial transistor | ME | TO-18 | 3 | -55°C | 175°C | 228K |
| 122. | BC108 | NPN silicon planar epitaxial transistor | ME | TO-18 | 3 | -55°C | 175°C | 228K |
| 123. | BC109 | NPN silicon planar epitaxial transistor | ME | TO-18 | 3 | -55°C | 175°C | 228K |
| 124. | BC140 | 650mW NPN silicon AF medium power amplifier | ME | TO-39 | 3 | -55°C | 175°C | 144K |
| 125. | BC141 | 650mW NPN silicon AF medium power amplifier | ME | TO-39 | 3 | -55°C | 175°C | 144K |
| 126. | BC142 | NPN silicon planar epitaxial transistor | ME | - | 3 | -55°C | 200°C | 72K |
| 127. | BC143 | NPN silicon planar epitaxial transistor | ME | - | 3 | -55°C | 200°C | 89K |
| 128. | BC146 | Miniature NPN AF low noise silicon planar epitaxial transistor | ME | MT-42 | 3 | -65°C | 125°C | 126K |
| 129. | BC160 | PNP silicon silicon planar epitaxial transistor | ME | TO-39 | 3 | -55°C | 175°C | 146K |
| 130. | BC161 | PNP silicon silicon planar epitaxial transistor | ME | TO-39 | 3 | -55°C | 175°C | 146K |
| 131. | BC167 | NPN silicon planar epitaxial transistor | ME | TO-92B | 3 | -55°C | 150°C | 228K |
| 132. | BC168 | NPN silicon planar epitaxial transistor | ME | TO-92B | 3 | -55°C | 150°C | 228K |
| 133. | BC169 | NPN silicon planar epitaxial transistor | ME | TO-92B | 3 | -55°C | 150°C | 228K |
| 134. | BC171 | 6V NPN high gain loe noise silicon planar epitaxial transistor | ME | - | 2 | -65°C | 150°C | 183K |
| 135. | BC172 | 5V NPN high gain loe noise silicon planar epitaxial transistor | ME | - | 2 | -65°C | 150°C | 183K |
| 136. | BC173 | 5V NPN high gain loe noise silicon planar epitaxial transistor | ME | - | 2 | -65°C | 150°C | 183K |
| 137. | BC177 | 300mW PNP silicon planar epitaxial transistor | ME | TO-18 | 2 | -55°C | 175°C | 225K |
| 138. | BC178 | 300mW PNP silicon planar epitaxial transistor | ME | TO-18 | 2 | -55°C | 175°C | 225K |
| 139. | BC179 | 300mW PNP silicon planar epitaxial transistor | ME | TO-18 | 2 | -55°C | 175°C | 225K |
| 140. | IRG4BC15UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A | IRF | - | 3 | -55°C | 150°C | 255K |
